Product Data Sheet
August 5, 2008
8 - 18 GHz Wideband Driver Amplifier
TGA8399C
Key Features and Performance
•
•
•
•
•
•
•
•
Chip Dimensions: 3.5mm x 2.4mm x 0.1 mm
Two Stage Driver Amplifier
0.25µm pHEMT 2MI Technology
8-18 GHz Frequency Range
13 dBm Nominal Pout
17 dB Nominal Gain
Balanced In/Out for Low VSWR
4.5V @ 50mA Self Bias
Chip Dimensions: 3.5mm x 2.4mm
x 0.1 mm
Fixtured Measured Performance
18
17
Small Signal Gain (dB)
16
15
14
13
12
11
10
9
8
8
9
10
11
12 13 14 15
Frequency (GHz)
16
17
18
0
-3
Primary Applications
•
•
Return Loss (dB)
X and Ku band Driver
Point-to-Point Radio
Gain
-6
-9
-12
-15
Output RL
Input RL
-18
-21
-24
-27
-30
12
11
10
Noise Figure (dB)
9
8
7
6
5
4
3
2
8
9
10
11
12 13 14 15
Frequency (GHz)
16
17
18
15
Pout
14
13
12
11
10
9
P1dB (dBm)
NF
8
7
6
5
Note: Datasheet is subject to change without notice.
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
TGA8399C
TABLE I
MAXIMUM RATINGS
Symbol
V
+
I
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
+
Parameter 1/
Positive Supply Voltage
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
180 mA
3.52 mA
17.0 dBm
0.94 W
150
°C
320
°C
-65
°C
to 150
°C
Notes
2/
2/
2/
2/, 3/
4/, 5/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power
shall not exceed P
D
.
3/ When operated at this bias condition with a base plate temperature of 70
°C,
the
median life is 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure
(T
M
). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
5/ These ratings apply to each individual FET.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
2
Product Data Sheet
August 5, 2008
TGA8399C
TABLE II
DC PROBE TESTS
(T
A
= 25
°C,
Nominal)
Symbol
V
P
BVGS
BVGD
Parameter
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum Maximum
-1.5
-30
-30
-0.5
-8
-8
Value
V
V
V
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25
°C,
Nominal)
V
d
= 5 V
Symbol
Gain
IRL
ORL
Parameter
Small Signal Gain
Input Return Loss
Output Return Loss
Test
Condition
F = 8 – 18 GHz
F = 8 – 18 GHz
F = 8 – 18 GHz
Limit
Min Nom Max
12
---
---
16
-18
-20
---
-12
-12
Units
dB
dB
dB
Parameter
R
θJC
Thermal
Resistance
(channel to backside of
carrier)
TABLE IV
THERMAL INFORMATION
Test Conditions
T
CH
(
o
C)
Vd = 4.5 V
Id = 50 mA
89
Pdiss = 0.225 W
R
θJC
(°C/W)
85
T
M
(Hours)
4.1 E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70
o
C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
3
Product Data Sheet
August 5, 2008
TGA8399C
TGA8399C Performance vs. Temperature
20
19
18
Small Signal Gain (dB)
17
16
15
14
13
12
11
10
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency (GHz)
+125C
+75C
+25C
+0C
-25C
-55C
18
17
16
Output P1dB (dBm)
15
14
13
12
11
10
9
8
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
+125C, 53.2mA
+75C, 53.5mA
+25C, 54.0mA
+0C, 53.9mA
-25C, 53.8mA
-55C, 53.2mA
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
4
Product Data Sheet
August 5, 2008
TGA8399C
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
5
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