SSG4543C
Elektronische Bauelemente
N-Ch: 6.5 A, 40 V, R
DS(ON)
32 m
P-Ch: -7.6 A, -40 V, R
DS(ON)
30 m
N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless
telephones
SOP-8
B
L
D
M
A
C
N
J
K
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SOP-8
saves board space
Fast switching speed
High performance trench technology
H
G
F
E
REF.
A
B
C
D
E
F
G
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
LeaderSize
13’ inch
Millimeter
Min.
Max.
5.8
6.20
4.80
5.00
3.80
4.00
0°
8°
0.50
0.93
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.51
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
1
SYMBOL
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
I
S
P
D
@ T
A
= 25°C
P
D
@ T
A
= 70°C
T
J
, T
STG
t≦ 10 sec
Steady State
N-CH
40
20
6.5
5.5
±50
2.3
2.1
1.3
P-CH
-40
-20
-7.6
-6.3
±50
-2.1
2.1
1.3
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
Operating Junction & Storage Temperature Range
-55 ~ 150
62.5
110
Thermal Resistance Ratings
Maximum Junction-to-Ambient
1
Notes
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
R
θJA
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C
Page 1 of 6
SSG4543C
Elektronische Bauelemente
N-Ch: 6.5 A, 40 V, R
DS(ON)
32 m
P-Ch: -7.6 A, -40 V, R
DS(ON)
30 m
N & P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol Ch
N
P
N
P
N
P
N
P
N
Drain-Source On-Resistance
1
R
DS(ON)
P
Forward Transconductance
1
g
fs
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Min.
1
-1
-
-
-
-
25
-50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Static
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
1
V
GS(th)
I
GSS
I
DSS
I
D(on)
-
-
-
-
-
-
-
-
-
-
-
-
40
31
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes
1.
2.
Pulse test：PW
≦
300
μs
duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
2
Max.
-
-
±100
±100
1
-1
-
-
32
42
30
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Teat Conditions
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 0V, V
GS
= 20V
V
DS
= 0V, V
GS
= -20V
V
DS
= 32V, V
GS
= 0V
V
DS
= -32V, V
GS
= 0V
V
DS
= 5V, V
GS
= 10V
V
DS
= -5V, V
GS
= -10V
V
GS
= 10V, I
D
= 6.5A
V
GS
= 4.5V, I
D
= 5.7A
V
GS
= -10V, I
D
= -7.6A
V
GS
= -4.5V, I
D
= -6.2A
V
DS
= 15V, I
D
= 6.5A
V
DS
= -15V, I
D
= -7.6A
V
nA
μA
A
mΩ
S
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
T
d(on)
T
r
T
d(off)
T
f
13
14
3.3
5.8
4.5
12
440
1800
80
280
130
150
20
15
9
16
70
62
20
46
nC
N-Channel
I
D
= 6.5A, V
DS
= 15V, V
GS
= 4.5V
P-Channel
I
D
= -7.6A, V
DS
= -15V, V
GS
= -4.5V
pF
N-Channel
V
DS
= 15V, V
GS
= 0V, f= 1MHz
P-Channel
V
DS
= -15V, V
GS
= 0V, f= 1MHz
nS
N-Channel
V
DD
= 15V, V
GS
= 10V
I
D
= 1A, R
GEN
= 25Ω
P-Channel
V
DD
= -15V, V
GS
= -10V
I
D
= -1A, R
GEN
= 15Ω
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C
Page 2 of 6
SSG4543C
Elektronische Bauelemente
N-Ch: 6.5 A, 40 V, R
DS(ON)
32 m
P-Ch: -7.6 A, -40 V, R
DS(ON)
30 m
N & P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C
Page 3 of 6
SSG4543C
Elektronische Bauelemente
N-Ch: 6.5 A, 40 V, R
DS(ON)
32 m
P-Ch: -7.6 A, -40 V, R
DS(ON)
30 m
N & P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C
Page 4 of 6
SSG4543C
Elektronische Bauelemente
N-Ch: 6.5 A, 40 V, R
DS(ON)
32 m
P-Ch: -7.6 A, -40 V, R
DS(ON)
30 m
N & P-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. C
Page 5 of 6
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