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SSG4801_15

Description
Dual-P Enhancement Mode Power MOSFET
File Size999KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SSG4801_15 Overview

Dual-P Enhancement Mode Power MOSFET

SSG4801
Elektronische Bauelemente
-5 A, -30 V, R
DS(ON)
50 m
Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4801 uses advanced trench technology to
provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V. The device is
suitable for use as a load switch or in PWM applications.
It may be used in a common drain arrangement to from a
bidirectional blocking switch.
SOP-8
B
L
D
M
FEATURES
A
C
N
J
K
Simple Drive Requirement
Lower On-resistance
Low Gate Charge
H
G
F
E
MARKING
REF.
4801SS

= Date Code
A
B
C
D
E
F
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
LeaderSize
13’ inch
S1
D1
G1
D1
D2
D2
S2
G2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Total Power Dissipation
Linear Derating Factor
Operating Junction & Storage Temperature Range
Thermal Resistance Junction-ambient
1
(Max.)
Notes:
1. Surface Mounted on FR4 Board, t
10sec.
2. Pulse width
300
μs,
duty cycle
2%
1
Symbol
V
DS
V
GS
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
I
D
I
DM
P
D
T
J
, T
STG
R
θJA
Ratings
-30
±12
-5
-4.2
-30
2
0.016
-55 ~ 150
62.5
Unit
V
V
A
A
W
W / °C
°C
°C / W
Thermal Resistance Ratings
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
Page 1 of 4
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