SSG4934N
Elektronische Bauelemente
8.9 A, 30 V, R
DS(ON)
58 mΩ
Ω
Dual N-Channel Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low R
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
SOP-8
B
L
D
M
A
C
N
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
H
G
J
K
F
E
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
PACKAGE INFORMATION
Package
SOP-8
MPQ
2.5K
Leader Size
13 inch
S
G
S
G
D
D
D
D
MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
= 25°
C
T
A
= 70°
C
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
30
±20
8.9
7.3
30
2.6
2.1
Unit
V
V
A
A
A
A
W
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
T
A
= 25°
C
T
A
= 70°
C
1.3
-55 ~ 150
°
C
Operating Junction & Storage Temperature Range
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.)
1
t
≦
10 sec
Steady State
R
θJA
62.5
110
° /W
C
° /W
C
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-May-2012 Rev. A
Page 1 of 2
SSG4934N
Elektronische Bauelemente
8.9 A, 30 V, R
DS(ON)
58 mΩ
Ω
Dual N-Channel Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
1
Symbol
Min.
Typ.
Static
Max.
Unit
V
nA
µA
A
m
S
V
Teat Conditions
V
DS
=V
GS
, I
D
=250µA
V
DS
=0, V
GS
= ±20V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, T
J
= 55°
C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4.4A
V
DS
=15V, I
D
=5A
I
S
=1.3A, V
GS
=0
V
GS(th)
I
GSS
I
DSS
I
D(on)
1
1
-
-
-
20
-
-
-
-
-
-
-
-
-
20
0.77
2
-
±100
1
10
-
18
26
-
-
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
R
DS(ON)
g
fs
V
SD
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
3.8
1.3
2
327
65
49
1.9
4
13
6
-
-
-
-
-
-
-
-
-
-
nS
pF
nC
I
D
= 5A
V
DS
= 15V
V
GS
= 4.5V
V
DS
=15V
V
GS
=0
f=1MHz
V
DD
=15V
I
D
=5A
V
GEN
=10V
R
L
=3
R
GEN
=6
Notes:
1. Pulse test：PW
≦
300µs duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-May-2012 Rev. A
Page 2 of 2
Embedded System
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