5962-9315603HXC datasheet, PDF

5962-9315603HXC: DescriptionSRAM Module, 128KX8, 85ns, CMOS, CDIP32, DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32; Categorystorage storage; File Size123KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5962-9315603HXC Overview

SRAM Module, 128KX8, 85ns, CMOS, CDIP32, DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32

Parameter Name	Attribute value
Objectid	1546151069
package instruction	DUAL CAVITY, BOTTOM BRAZED, HERMETIC SEALED, CERAMIC, DIP-32
Reach Compliance Code	unknown
Maximum access time	85 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T32
JESD-609 code	e4
length	40.6 mm
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum seat height	5.1 mm
Maximum standby current	0.0004 A
Minimum standby current	3 V
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

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