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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP83P04PDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP83P04PDG-E1-AY
NP83P04PDG-E2-AY
Note
Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
PACKAGE
TO-263 (MP-25ZP)
Note
Pb-free (This product does not contain Pb in external electrode.)
FEATURES
•
Super low on-state resistance
R
DS(on)1
= 5.3 mΩ MAX. (V
GS
=
−10
V, I
D
=
−41.5
A)
R
DS(on)2
= 8.0 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−41.5
A)
•
High current rating: I
D(DC)
=
m83
A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
−40
m20
m83
m249
150
1.8
175
−55
to
+175
56
315
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
=
−30
V, R
G
= 25
Ω,
V
GS
=
−20 →
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.0
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18690EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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