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30KPA75A

Description
30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size108KB,4 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
Download Datasheet View All

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30KPA75A Overview

30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

30KPA SERIES
30000 Watts Axial Leaded
Transient Voltage Suppressor
Features
·
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
·
Glass passivated junction
·
30000W Peak Pulse Power
capability on 10/1000 µs waveform
·
Excellent clamping capability
·
Repetition rate (duty cycle):0.05%
·
Low incremental surge resistance
·
Fast response time: typically less
than 1.0 ps from 0 volts to BV
·
Typical Id less than 1µA above 10V
·
High temperature soldering guaranteed:
265°C/10 seconds/.375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
A
B
A
D
C
Mechanical Data
·
Case:Molded plastic over glass passivated junction
·
Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
·
Polarity: Color band denoted positive end (cathode)
except Bipolar
·
Mounting Position: Any
·
Weight: 0.07 ounce, 2.1 gram
R-6
Dim
Min
Max
A
25.4
B
8.60
9.10
C
1.20
1.30
D
8.60
9.10
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
RATING
Peak Pulse Power Dissipation on 10/1000 µs
waveform (NOTE 1)
Peak Pulse Current of on 10-1000 µs waveform
(NOTE 1)
Steady State Power Dissipation at Tl=75 °C
Lead Lengths.375", (9.5mm)(NOTE 2)
SYMBOL
P
PPM
I
PPM
P
M
(AV)
VALUE
Minimum 30000
SEE TABLE 1
8.0
UNITS
Watts
Amps
Watts
Peak Forward Surge Current, 8.3ms Sine-Wave
I
FSM
400.0
Superimposed on Rated Load, (JEDEC Method)
(NOTE 3)
Operatings and Storage Temperature Range
T
J
, T
STG
-55 to +175
NOTES:
1.Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2.Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.
3.8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum
Amps
°C
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