BZD27C100P datasheet, PDF - EEWORLD Datasheet

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BZD27C100P: Description100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE; Categorysemiconductor Discrete semiconductor; File Size442KB，2 Pages; ManufacturerSUNMATE; Websitehttp://www.sunmate.tw/

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BZD27C100P Overview

100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZD27C100P Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Rated working voltage	100 V
Processing package description	GREEN, PLASTIC, SUB SMA, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	FLAT
terminal coating	PURE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	ZENER
structure	single
Diode component materials	silicon
Maximum power consumption limit	1 W
polarity	unidirectional
Diode type	Zener diode
Working test current	4 mA
Maximum total reference voltage	6 %

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BZD27C SERIES

800mW Surface Mount Zener Diodes

Features

·

Sillicon planar zener diodes.

·

Low profile surface-mount package.

·

Zener and surge current specification

·

Low leakage current

·

Excellent stability

·

High temperature soldering guaranteed:

265℃/10 seconds, at terminals

M

L

K

B

C

H

A

Mechanical Data

·

Case: JEDEC SOD-123 molded plastic

·

Polarity: Color band denotes positive end

( cathode ) except for bidirectional

SOD-123

Dim

Min

Max

A

0.55 Typ

B

1.40

1.70

C

3.55

3.85

H

2.55

2.85

J

0.00

0.10

K

1.00

1.35

L

0.25

0.40

M

0.10

0.15

0

8°

α

All Dimensions in mm

·

Marking code: see TABLE 1

·

Weight: 0.006 ounces, 0.02 grams

·

Mounting position: Any

Maximum Ratings and Electrical Characteristics

@ T

A

= 25°C unless otherwise specified

SYMBOL

Non-repetitive peak pulse power dissipation

with a 10/1000µs waveform (NOTE 1)

Power dissipation at T

A

=25℃ (NOTE 2)

Reverse current at stand-off voltage @ V

WM

Maximum instantaneous forward voltage at 0.2A

Thermal resistance junction to ambient

Operating temperature junction range

Storage temperature range

NOTES:(1)T

J

=25℃ prior to surge.

(2)Mounted on epoxy-glass PCB with 3×3 mm Cu pads(≥40µm thick)

(3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000

µs

pulse)

VALUE

UNITS

P

PPM

P

tot

I

R

V

F

R

θJA

T

J

T

STG

150

0.8

SEE TABLE 1

1.2

180

- 55 to +150

Watts

µA

Volts

K/W

℃

1of2

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