IRF3808
Typical Applications
q
q
Power MOSFET
D
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
q
q
q
q
q
q
V
DSS
= 75V
G
S
R
DS(on)
= 0.007Ω
I
D
= 140AV
TO-220AB
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low RθJC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt
S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
140V
97V
550
330
2.2
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
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IRF3808
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
U
Min.
75
–––
–––
2.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.086
5.9
–––
–––
–––
–––
–––
–––
150
31
50
16
140
68
120
4.5
7.5
5310
890
130
6010
570
1140
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
7.0
mΩ V
GS
= 10V, I
D
= 82A
T
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 82A
20
V
DS
= 75V, V
GS
= 0V
µA
250
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
220
I
D
= 82A
47
nC V
DS
= 60V
76
V
GS
= 10VT
–––
V
DD
= 38V
–––
I
D
= 82A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
T
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 60V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 140V
showing the
A
G
integral reverse
––– ––– 550
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 82A, V
GS
= 0VT
––– 93 140
ns
T
J
= 25°C, I
F
= 82A
––– 340 510
nC di/dt = 100A/µs
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Q
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R
Starting T
J
= 25°C, L = 0.130mH
R
G
= 25Ω, I
AS
= 82A. (See Figure 12).
S
I
SD
≤
82A, di/dt
≤
310A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
T
Pulse width
≤
400µs; duty cycle
≤
2%.
U
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
VCalculated
continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
WLimited
by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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IRF3808
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
4.5V
10
10
1
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
1
0.1
1
20µs PULSE WIDTH
T
J
= 175
10
°
C
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
3.0
I
D
= 137A
ID, Drain-to-Source Current
(Α
)
2.5
TJ = 175°C
R
DS(on)
, Drain-to-Source On Resistance
2.0
(Normalized)
100.00
1.5
T J = 25°C
1.0
0.5
10.00
1.0
3.0
5.0
7.0
VDS = 15V
20µs PULSE WIDTH
9.0
11.0
13.0
15.0
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
T
J
, Junction Temperature
(
°
C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF3808
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
12
I
D
=
82A
10
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
C, Capacitance(pF)
V
GS
, Gate-to-Source Voltage (V)
10000
8
Ciss
6
1000
Coss
4
2
Crss
100
1
10
100
0
0
40
80
120
160
Q
G
, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.00
T J = 175°C
10.00
T J = 25°C
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
VSD , Source-toDrain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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IRF3808
140
LIMITED BY PACKAGE
120
V
DS
V
GS
R
G
R
D
D.U.T.
+
100
-
V
DD
I
D
, Drain Current (A)
80
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
60
40
Fig 10a.
Switching Time Test Circuit
V
DS
90%
20
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
0.10
Thermal Response
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
J
= P
DM
x Z
thJC
P
DM
t
1
t
2
+T
C
1
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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