IRFB4212PBF
Key Parameters
Features
•
Key parameters optimized for Class-D audio
amplifier applications
•
Low R
DSON
for improved efficiency
•
Low Q
G
and Q
SW
for better THD and improved
efficiency
•
Low Q
RR
for better THD and lower EMI
•
175°C operating junction temperature for
ruggedness
•
Can deliver up to 150W per channel into 4Ω load in
half-bridge topology
G
S
D
V
DS
R
DS(ON)
typ. @ 10V
Q
g
typ.
Q
sw
typ.
R
G(int)
typ.
T
J
max
100
72.5
15
8.3
2.2
175
V
m:
nC
nC
Ω
°C
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
Power Dissipation
f
Power Dissipation
f
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
10lbxin (1.1Nxm)
Max.
100
±20
18
13
57
60
30
0.4
-55 to + 175
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Typ.
–––
0.50
–––
Max.
2.5
–––
62
°C/W
Units
2014-8-9
1
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IRFB4212PBF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
R
G(int)
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
L
D
L
S
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Min.
100
–––
–––
3.0
–––
–––
–––
–––
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.09
58
–––
-13
–––
–––
–––
–––
–––
15
3.3
1.4
6.9
3.4
8.3
2.2
7.7
28
14
3.9
550
66
35
350
4.5
7.5
–––
–––
72.5
5.0
–––
20
250
200
-200
–––
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
V
GS
= 0V
V
DS
= 50V
ns
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 13A
V
mΩ
V
mV/°C
µA
nA
S
V/°C Reference to 25°C, I
D
= 1mA
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 13A
V
DS
= 80V
nC
V
GS
= 10V
I
D
= 13A
See Fig. 6 and 19
V
DD
= 50V, V
GS
= 10V
I
D
= 13A
R
G
= 2.5Ω
Ãe
ƒ = 1.0MHz,
Between lead,
6mm (0.25in.)
from package
See Fig.5
V
GS
= 0V, V
DS
= 0V to 80V
D
G
S
and center of die contact
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Ãg
d
Typ.
Max.
Units
mJ
A
mJ
–––
25
Repetitive Avalanche Energy
g
Min.
–––
–––
–––
–––
–––
–––
–––
–––
41
69
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ. Max. Units
18
A
57
1.3
62
100
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13A, V
GS
= 0V
T
J
= 25°C, I
F
= 13A
di/dt = 100A/µs
Ã
e
e
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.32mH, R
G
= 25Ω, I
AS
= 13A.
Pulse width
≤
400µs; duty cycle
≤
2%.
R
θ
is measured at
T
J
of approximately 90°C.
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
2014-8-9
2
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IRFB4212PBF
100
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
100
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
10
6.0V
6.0V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100.0
Fig 2.
Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 13A
2.5
ID, Drain-to-Source Current
(Α)
VGS = 10V
10.0
TJ = 175°C
2.0
1.0
TJ = 25°C
1.5
VDS = 50V
0.1
2
4
6
1.0
≤
60µs PULSE WIDTH
8
10
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
ID= 13A
VDS = 80V
VDS= 50V
VDS= 20V
16
C, Capacitance (pF)
1000
Ciss
12
Coss
100
8
Crss
4
10
1
10
100
0
0
5
10
15
20
25
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
2014-8-9
3
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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IRFB4212PBF
100.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
10.0
TJ = 175°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
DC
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
20
Fig 8.
Maximum Safe Operating Area
5.0
16
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
4.0
12
ID = 250µA
8
3.0
4
0
25
50
75
100
125
150
175
2.0
-75
-50
-25
0
25
50
75
100 125 150 175
TJ , Junction Temperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Threshold Voltage vs. Temperature
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
0.1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
0.0489
0.3856
1.3513
0.7140
τi
(sec)
0.00000
0.000062
0.001117
0.013125
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-9
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IRFB4212PBF
Ω
RDS (on), Drain-to -Source On Resistance ( )
EAS, Single Pulse Avalanche Energy (mJ)
0.5
120
ID = 13A
0.4
100
3.2A
5.7A
BOTTOM
13A
TOP
ID
80
0.3
60
0.2
TJ = 125°C
0.1
40
20
0.0
6
8
TJ = 25°C
10
12
14
16
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
10
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
Duty Cycle = Single Pulse
0.01
Avalanche Current (A)
0.05
1
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆Tj
= 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
30
EAR , Avalanche Energy (mJ)
25
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 13A
20
15
10
5
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy Vs. Temperature
2014-8-9
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Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
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