Preliminary
Datasheet
BCR12CM-12LB
600V - 12A - Triac
Medium Power Use
Features
I
T (RMS)
: 12 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
R07DS1030EJ0400
(Previous: REJ03G0456-0300)
Rev.4.00
Feb 25, 2013
Non-Insulated Type
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
RENESAS Package code: PRSS0004AA-A
A
(Package name: TO-220)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
1
2
3
12
3
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, and solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
12
120
60
5
0.5
10
2
– 40 to +150
– 40 to +150
2.1
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Typical value
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 123C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
R07DS1030EJ0400 Rev.4.00
Feb 25, 2013
Page 1 of 8
BCR12CM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
1.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 20 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C / 150C,
V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125C/150C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 1.
2.
3.
4.
5.
6.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
tab 1.5 mm away from the molded case.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
20 mA) is also available. (I
GT
item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS1030EJ0400 Rev.4.00
Feb 25, 2013
Page 2 of 8
BCR12CM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
200
Rated Surge On-State Current
Surge On-State Current (A)
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
1.0
1.5
2
Tj = 150°C
Tj = 25°C
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
V
GM
= 10V
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
Gate Voltage (V)
10
1
7
P
G(AV)
=
5
0.5W
3
V
GT
= 1.5V
2
10
0
7
5
3
2
10
–1
P
GM
= 5W
I
GM
= 2A
I
RGT I
, I
RGT III
I
FGT I
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.1V
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
–60 –40 –20 0 20 40 60 80 100 120 140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
10
2
2 3 5 7 10
3
2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Transient Thermal Impedance (°C/W)
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1030EJ0400 Rev.4.00
Feb 25, 2013
Page 3 of 8
BCR12CM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
32
On-State Power Dissipation (W)
24
360° Conduction
Resistive,
20
inductive loads
16
12
8
4
0
0
2
4
6
8
10
12
14
16
Case Temperature (°C)
28
140
120
Curves apply regardless
of conduction angle
100
80
60
40
360° Conduction
20
Resistive,
inductive loads
0
0
4
6
2
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
120
100
80
60
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Ambient Temperature (°C)
140
All fins are black painted
aluminum and greased
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Curves apply
40
regardless of
conduction angle
20
Resistive, inductive loads
Natural convection
0
0
4
6
2
8 10
12
14
16
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100120 140160
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Holding Current vs.
Junction Temperature
Typical Example
10
1
–60 –40 –20 0 20 40 60 80 100 120140160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1030EJ0400 Rev.4.00
Feb 25, 2013
Page 4 of 8
BCR12CM-12LB
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
Preliminary
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140160
Typical Example
Distribution
T
2
+, G–
Typical Example
Latching Current (mA)
10
1
7
5
3
2
10
0
–40
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
Tj = 125°C
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
Typical Example
Tj = 150°C
III Quadrant
III Quadrant
I Quadrant
I Quadrant
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
2
Time
Typical Example
Main Voltage
7
(dv/dt)c
V
D
Tj = 125°C
5
Main Current
I
T
= 4A
(di/dt)c
I
T
3
τ
= 500μs
τ
Time
2
V
D
= 200V
f = 3Hz
10
1
Minimum
7
I Quadrant
Characteristics
5
Value
3
2
10
0
7
10
0
2 3
5 7 10
1
2 3
5 7 10
2
III Quadrant
Commutation Characteristics (Tj=150°C)
10
2
Typical Example
7
Tj = 150°C
5
I
T
= 4A
3
τ
= 500μs
2
V
D
= 200V
f = 3Hz
10
1
7
5
3
I Quadrant
2
10
0
7
10
0
Minimum
Characteristics
Value
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
III Quadrant
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1030EJ0400 Rev.4.00
Feb 25, 2013
Page 5 of 8
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