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IRFR024N

Description
17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Categorysemiconductor    Discrete semiconductor   
File Size925KB,10 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet Parametric View All

IRFR024N Overview

17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

IRFR024N Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage55 V
Processing package descriptionDPAK-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current17 A
Rated avalanche energy71 mJ
Maximum drain on-resistance0.0750 ohm
Maximum leakage current pulse68 A
IRFR/U024N
D -P ak
T O -2 52 A A
I-P ak
T O -25 1 A A
l
l
l
l
l
l
Ultra Low On-Resistance
Surface Mount (IRFR024N)
Straight Lead (IRFU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Description
The D-PAK is designed for surface mounting
using vapor phase, infrared, or wave soldering
techniques. The straight lead version (IRFU series)
is for through-hole mounting applications.
Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.075Ω
I
D
= 17A…
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
†
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
45
0.30
± 20
71
10
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
2014-8-15
1
www.kersemi.com
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