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IRFR3607

Description
High Efficiency Synchronous Rectification in SMPS
File Size1MB,10 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet View All

IRFR3607 Overview

High Efficiency Synchronous Rectification in SMPS

IRFR3607PBF
IRFU3607PBF
D-Pak
IRFR3607PBF
I-Pak
IRFU3607PBF
Applications
l
High Efficiency Synchronous Rectification in
SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche SOA
l
Enhanced body diode dV/dt and dI/dt
Capability
G
D
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
75V
7.34mΩ
9.0mΩ
80Ac
56A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Max.
80c
56c
56
310
140
0.96
± 20
27
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
e
Avalanche Current
d
Repetitive Avalanche Energy
g
120
46
14
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Junction-to-Case
k
Junction-to-Ambient
j
Junction-to-Ambient (PCB Mount)
jk
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
2014-8-16
1
www.kersemi.com
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