AUIRFS4310Z
Features
●
●
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
2
Pak
AUIRFS4310Z
100V
4.8m
:
6.0m
:
127A
120A
c
Absolute Maximum Ratings
Stresses beyond those listed under ?°Absolute Maximum Ratings?±
may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any
other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for exten
ded periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured underboard mounted
and still air conditions. Ambient temperature (TA) is 25??C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Max.
d
Ãd
e
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
f
d
127
90
120
560
250
1.7
± 20
130
See Fig. 14, 15, 22a, 22b,
18
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
k
Parameter
Typ.
Max.
0.6
40
Units
°C/W
j
1
–––
–––
2014-8-27
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AUIRFS4310Z
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
–––
–––
2.0
150
–––
–––
–––
–––
–––
–––
0.11
4.8
–––
–––
0.7
–––
–––
–––
–––
–––
–––
6.0
4.0
–––
–––
20
250
100
-100
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 75A
V
V
DS
= V
GS
, I
D
= 150μA
S
V
DS
= 50V, I
D
= 75A
μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
g
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
29
35
85
20
60
55
57
6860
490
220
570
920
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 75A
V
DS
=50V
V
GS
= 10V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
V
DD
= 65V
I
D
= 75A
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 80V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 80V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min.
–––
–––
Typ. Max. Units
–––
–––
127
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
A
A
Ãd
560
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
–––
–––
1.3
V
V
R
= 85V,
–––
40
–––
ns T
J
= 25°C
T
J
= 125°C
I
F
= 75A
–––
49
–––
di/dt = 100A/μs
–––
58
–––
nC T
J
= 25°C
T
J
= 125°C
–––
89
–––
T
J
= 25°C
–––
2.5
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
2014-8-27
2
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AUIRFS4310Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
D
2
Pak
MSL1
Class M4 (+/- 800V)
†††
AEC-Q101-002
Class H2 (+/- 4000V)
†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
RoHS Compliant
Qualification standards can be found at International Rectifiers web site:
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
2014-8-27
3
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AUIRFS4310Z
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
10
4.5V
4.5V
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
60μs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
2.5
Fig 2.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
2.0
ID, Drain-to-Source Current
)
VGS = 10V
100
TJ = 175°C
10
1.5
TJ = 25°C
1
1.0
VDS = 50V
0.1
2.0
3.0
4.0
5.0
60μs PULSE WIDTH
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
Fig 4.
Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS = 80V
VDS= 50V
VDS= 20V
10000
16
C, Capacitance (pF)
Ciss
12
6000
8
4000
2000
Coss
Crss
4
0
1
10
100
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
2014-8-27
4
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS4310Z
1000
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
TJ = 175°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
100μsec
10
TJ = 25°C
10
10msec
1
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
10
100
0.1
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
140
LIMITED BY PACKAGE
120
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
130
ID = 5mA
120
100
80
60
40
20
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
110
100
90
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
3.0
Fig 10.
Drain-to-Source Breakdown Voltage
600
2.5
500
I D
11A
19A
BOTTOM
75A
TOP
2.0
400
Energy (μJ)
1.5
300
1.0
200
0.5
100
0.0
0
20
40
60
80
100
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
2014-8-27
5
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
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