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IRFS840B

Description
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size2MB,9 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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IRFS840B Overview

8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRFS840B Parametric

Parameter NameAttribute value
Minimum breakdown voltage500 V
Number of terminals3
Processing package descriptionTO-220, 3 PIN
EU RoHS regulationsYes
stateActive
Rated avalanche energy320 mJ
structureSINGLE WITH BUILT-IN DIODE
Maximum leakage current8 A
Maximum drain on-resistance0.8000 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jedec_95_codeTO-220AB
jesd_30_codeR-PSFM-T3
jesd_609_codee3
moisture_sensitivity_levelNOT APPLICABLE
Number of components1
operating modeENHANCEMENT MODE
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeN-CHANNEL
Maximum leakage current pulse32 A
qualification_statusCOMMERCIAL
surface mountNO
terminal coatingMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRF840B/IRFS840B
500V N-Channel MOSFET
TO-220
TO-220F
IRFS Series
Features
8.0A, 500V, R
DS(on)
= 0.8Ω @V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
IRF Series
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRF840B
500
8.0
5.1
32
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
IRFS840B
8.0
5.1
32
320
8.0
13.4
3.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
134
1.08
-55 to +150
300
44
0.35
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF840B
0.93
0.5
62.5
IRFS840B
2.86
--
62.5
Units
°C/W
°C/W
°C/W
2014-8-13
1
www.kersemi.com

IRFS840B Related Products

IRFS840B IRF840B
Description 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Minimum breakdown voltage 500 V 500 V
Number of terminals 3 3
Processing package description TO-220, 3 PIN TO-220, 3 PIN
EU RoHS regulations Yes Yes
state Active Active
Rated avalanche energy 320 mJ 320 mJ
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum leakage current 8 A 8 A
Maximum drain on-resistance 0.8000 ohm 0.8000 ohm
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
jedec_95_code TO-220AB TO-220AB
jesd_30_code R-PSFM-T3 R-PSFM-T3
jesd_609_code e3 e3
moisture_sensitivity_level NOT APPLICABLE NOT APPLICABLE
Number of components 1 1
operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED
larity_channel_type N-CHANNEL N-CHANNEL
Maximum leakage current pulse 32 A 32 A
qualification_status COMMERCIAL COMMERCIAL
surface mount NO NO
terminal coating MATTE TIN MATTE TIN
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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