IRLR/U2905
l
l
l
l
l
l
l
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2905)
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D -P a k
T O -2 5 2 A A
I-P a k
T O -2 5 1 A A
Description
The D-PAK is designed for surface mounting
using vapor phase, infrared, or wave solde
ring techniques. The straight lead version
(IRFU series) is for through-hole mounting
applications. Power dissipation levels up to
1.5 watts are possible in typical surface
mount applications.
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.027Ω
I
D
= 42A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
42
30
160
110
0.71
± 16
210
25
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2014-8-25
1
www.kersemi.com
IRLR/U2905
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
55
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.070 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.027
V
GS
= 10V, I
D
= 25A
––– ––– 0.030 W
V
GS
= 5.0V, I
D
= 25A
––– ––– 0.040
V
GS
= 4.0V, I
D
= 21A
1.0
––– 2.0
V
V
DS
= V
GS
, I
D
= 250µA
21
––– –––
S
V
DS
= 25V, I
D
= 25A
––– ––– 25
V
DS
= 55V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
––– ––– 48
I
D
= 25A
––– ––– 8.6
nC V
DS
= 44V
––– ––– 25
V
GS
= 5.0V, See Fig. 6 and 13
–––
11 –––
V
DD
= 28V
–––
84 –––
I
D
= 25A
ns
–––
26 –––
R
G
= 3.4Ω, V
GS
= 5.0V
–––
15 –––
R
D
= 1.1Ω, See Fig. 10
Between lead,
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
––– 1700 –––
V
GS
= 0V
––– 400 –––
pF
V
DS
= 25V
––– 150 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 42
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
––– 80 120
ns
T
J
= 25°C, I
F
= 25A
––– 210 320
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L =470µH
R
G
= 25Ω, I
AS
= 25A. (See Figure 12)
I
SD
≤
25A, di/dt
≤
270A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRLZ44N data and test conditions.
2014-8-25
2
www.kersemi.com
IRLR/U2905
1000
TOP
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
1000
I
D
, Drain-to-Source Current (A )
100
I
D
, Drain-to-Source Current (A )
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
10
10
2.5 V
2.5V
2 0µ s P U LS E W ID TH
T
J
= 2 5°C
0.1
1
10
1
100
A
1
0.1
1
2 0µ s P U LS E W ID TH
T
J
= 1 75 °C
10
100
A
V
D S
, D rain-to-S ource V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
D S (on)
, Drain-to-S ource O n Resistance
(N orm alized)
I
D
= 4 1A
I
D
, D ra in -to-S ourc e C urrent (A)
2.5
T
J
= 2 5 °C
100
2.0
T
J
= 1 75 °C
1.5
10
1.0
0.5
1
2.0
3.0
4.0
5.0
V
D S
= 2 5V
2 0µ s P U L S E W ID TH
6.0
7.0
8.0
9.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -Sou rce Voltage (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
2014-8-25
3
www.kersemi.com
IRLR/U2905
2800
2400
C
iss
2000
V
G S
, G a te-to-S ou rc e V o ltag e (V )
V
GS
C
is s
C
rs s
C
oss
=
=
=
=
0V,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
gd
15
I
D
= 2 5A
V
DS
= 44V
V
DS
= 28V
12
C , Capacitance (pF)
1600
9
1200
C
oss
6
800
C
rss
400
3
0
1
10
100
A
0
0
10
20
30
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
40
50
60
70
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R
D S (o n)
I
D
, Drain C urrent (A )
100
10µ s
100
100µ s
T
J
= 1 75 °C
T
J
= 25 °C
10
1m s
10
0.4
0.8
1.2
1.6
V
G S
= 0V
2.0
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
10m s
2.4
100
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-8-25
4
www.kersemi.com
IRLR/U2905
50
V
DS
LIMITED BY PACKAGE
R
D
V
GS
40
D.U.T.
+
R
G
I
D
, Drain Current (A)
-
V
DD
30
5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
t
2
0.1
0.05
0.02
0.01
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-25
5
www.kersemi.com
京公网安备 11010802033920号
EEWORLD
