SB120 – SB1100
1.0A Axial Leaded Schottky Barrier Diode
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
High Current Capability
A
B
!
Low Power Loss, High Efficiency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
D
A
C
Mechanical Data
!
!
!
!
!
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
DO-41
Dim
Min
Max
25.4
—
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
L
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
@T
A
=25°C unless otherwise specified
SB120 SB130 SB140
20
14
30
21
40
28
SB150 SB160
50
35
1.0
60
42
SB180 SB1100
80
56
100
70
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
C
j
R
JL
R
JA
T
j
, T
STG
110
0.50
40
0.70
0.5
10
80
15
50
-65 to +150
0.85
A
V
mA
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1of2
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
20
10
I
(O),
AVERAGE FORWARD CURRENT (A)
1.0
SB120 - SB140
SB150 - SB160
0.5
1.0
SB180 - SB1100
T
j
= 25
°
C
I
F
Pulse Width = 300
µ
s
0
25
50
75
100
125
150
0.1
0.0
0.2
0.4
0.6
0.8
1.0
T
L
, LEAD TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
40
T
j
= 150
°
C
1000
C
j
, JUNCTION CAPACITANCE (pF)
Single Half Sine-Wave
(JEDEC Method)
T
j
= 25
°
C
f = 1.0MHz
30
SB120 - SB140
20
100
SB150 - SB1100
10
0
1
10
100
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
100
10
T
j
= 100
°
C
1.0
T
j
= 75
°
C
0.1
0.01
T
j
= 25
°
C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2of2
Embedded System
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