DMG7410SFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
Product Summary
V
(BR)DSS
30V
R
DS(ON)
20mΩ @ V
GS
= 10V
27mΩ @ V
GS
= 4.5V
I
D
T
A
= +25°C
8.0 A
6.5 A
Features
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS (Avalanche) rated
100% Rg tested
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
POWERDI3333-8
S
S
Case: POWERDI 3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Pin 1
S
G
®
1
2
3
8
7
6
5
Top View
Internal Schematic
D
D
D
D
4
Bottom View
Top View
Ordering Information
(Note 4)
Part Number
DMG7410SFG-7
DMG7410SFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
YYWW
G74
G74 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 for 2010)
WW = Week Code (01 – 53)
N39
N39 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 10 for 2010)
WW = Week Code (01 – 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMG7410SFG
Document number: DS35108 Rev. 8 - 2
1 of 7
www.diodes.com
July 2015
© Diodes Incorporated
DMG7410SFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
Steady
State
t10s
Steady
State
t10s
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
D
I
DM
I
AR
E
AR
Value
30
±25
5.3
4.2
8.0
6.3
9.5
7.7
6.5
4.9
7.8
6.2
70
18
16
Unit
V
V
A
A
A
A
A
A
A
mJ
NEW PRODUCT
Continuous Drain Current (Note 6) V
GS
= 4.5V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Power Dissipation (Note 6) t10s
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) t10s
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
Symbol
P
D
R
θJA
P
D
R
θJA
P
D
R
θJA
T
J
,
T
STG
Max
1.0
130.6
2.07
62.5
3.0
43.8
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
DMG7410SFG
Document number: DS35108 Rev. 8 - 2
2 of 7
www.diodes.com
July 2015
© Diodes Incorporated
DMG7410SFG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V
GS
= 4.5V
Total Gate Charge V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Bodyy Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
30
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.2
13.5
22
13.0
0.7
580
110
70
2.0
5.3
11.3
1.9
1.9
4.4
4.6
19.5
5.8
12.6
10.5
Max
-
0.1
±100
2.0
20
27
-
1.0
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 7.5A
V
DS
= 5V, I
D
= 10A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 15V, I
D
= 10A
V
GS
= 10V, V
DS
= 15V,
I
D
= 10A
NEW PRODUCT
pF
Ω
nC
ns
ns
ns
ns
ns
nC
V
GS
= 10V, V
DS
= 15V,
R
L
= 15Ω, R
G
= 6Ω
IF=8A, di/dt=500A/µs
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
100
P
(PK)
, PEAK TRANSIENT POIWER (W)
R
DS(on)
Limited
P
W
= 10µs
400
350
300
250
200
150
100
50
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
Single Pulse
R
JA
= 60
C/W
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
0.1
T
J(max)
= 150°C
T
A
= 25°C
Single Pulse
P
W
= 100µs
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
DMG7410SFG
Document number: DS35108 Rev. 8 - 2
3 of 7
www.diodes.com
July 2015
© Diodes Incorporated
DMG7410SFG
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
NEW PRODUCT
D = 0.01
D = 0.005
R
JA(t)
= r
(t)
* R
JA
R
JA
= 60
C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
30
V
GS
= 4.0V
30
V
DS
= 5V
V
GS
= -55°C
V
GS
= 85°C
25
V
GS
= 4.5V
25
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
20
V
GS
= 10V
V
GS
= 3.5V
20
V
GS
= 150°C
15
15
10
V
GS
= 3.0V
10
V
GS
= 25°C
5
V
GS
= 2.5V
5
V
GS
= 125°C
0
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
2
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.032
0.028
0.024
0.02
0.016
0.012
0.008
0.004
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.045
V
GS
= 4.5V
T
A
= 125°C
T
A
= 150°C
0.04
0.035
0.03
0.025
0.02
0.015
T
A
= -55°C
T
A
= 85°C
T
A
= 25°C
V
GS
= 10V
0.01
0.005
0
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
30
DMG7410SFG
Document number: DS35108 Rev. 8 - 2
4 of 7
www.diodes.com
July 2015
© Diodes Incorporated
DMG7410SFG
R
DSON
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 9 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
= 5A
V
GS
= 10V
I
D
= 10A
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
V
GS
= 4.5V
I
D
= 5A
1
NEW PRODUCT
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
30
2
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
25
I
D
= 1mA
I
S
, SOURCE CURRENT (A)
1.5
20
T
A
= 25°C
1
I
D
= 250µA
15
10
0.5
5
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
1,000
f = 1MHz
C
ISS
0
-50
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
1.2
10,000
I
DSS
, LEAKAGE CURRENT (nA)
T
A
= 150°C
C
T
, CAPACITANCE (pF)
1,000
T
A
= 125°C
C
OSS
100
C
RSS
100
T
A
= 85°C
10
T
A
= 25°C
10
0
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
4
20
1
0
10
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Leakage Current
vs. Drain-Source Voltage
30
DMG7410SFG
Document number: DS35108 Rev. 8 - 2
5 of 7
www.diodes.com
July 2015
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
