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TVR4J

Description
1.2 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size118KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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TVR4J Overview

1.2 A, 600 V, SILICON, RECTIFIER DIODE

TVR4J-TVR4N
2.0A Axial Leaded Fast Recovery Rectifier
Features
·
Low cos t
·
Diffus ed junction
·
Low leakage
·
Low forward voltage drop
·
High current capability
·
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
·
The plas tic m aterial carries
U/L
recognition
94V-0
A
B
A
D
C
Mechanical Data
·
Cas e:JEDEC DO-15,m olded plas tic
·
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
·
Polarity: Color band denotes cathode
Dim
A
B
C
D
DO-15
Min
25.40
5.50
0.686
2.60
Max
¾
7.62
0.889
3.60
·
Weight: 0.014 ounces ,0.39 gram s
·
Mounting pos ition: Any
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25°C unless otherwise specified
TVR4J
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
TVR4N
1000
700
1000
2.0
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
600
420
600
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
50.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.3
5.0
100.0
1000
20
40
-55----+150
-55----+150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance f rom junction to am bient.
1 of 2

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Description 1.2 A, 600 V, SILICON, RECTIFIER DIODE 1.2 A, 1000 V, SILICON, RECTIFIER DIODE
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