LLC
Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch
3N161
FEATURES
•
Channel Cut Off With Zero Gate Voltage
•
Square-Law Transfer Characteristic Reduces Distortion
•
Independent Substrate Connection Provides Flexibility
In Biasing
•
Internally Connected Diode Protects Gate From
Damage Due to Overvoltage
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage . . . . . . . . . . . . . . . . . 40V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TO-72
ORDERING INFORMATION
Part
3N161
X3N161
D
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C
S
G
1507Z
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
I
GSSF
BV
GSS
I
DSS
V
GS(th)
V
GS
I
D(on)
| y
fs
|
| y
os
|
C
iss
C
rss
PARAMETER
Forward Gate-Terminal Current
Forward Gate-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
Gate-Source Threshold Voltage
Gate-Source Voltage
On-State Drain Current (Note 2)
Small-Signal Common-Source Forward Transfer Admittance
Small-Signal Common-Source Output Admittance
Common-Source Short-Circuit Input Capacitance (Note 1)
Common-Source Short-Circuit Reverse Transfer Capacitance (Note 1)
-1.5
-4.5
-40
-25
-10
-10
-5
-8
-120
mA
µS
V
DS
= -15V,
I
D
= -8mA
pF
f = 1MHz
MIN MAX
-100
-10
UNITS
pA
nA
V
nA
µA
V
TEST CONDITIONS
V
GS
= -25V, V
DS
= 0
T
A
= +100
o
C
I
G
= -0.1mA, V
DS
= 0
V
DS
= -15V, V
GS
= 0
V
DS
= -25V, V
GS
= 0
VDS = -15V, I
D
= -10µA
V
DS
= -15V, I
D
= -8mA
V
DS
= -15V, V
GS
= -15V
f = 1kHz
3500 6500
250
10
4
NOTES: 1.
For design reference only, not 100% tested.
2.
Pulse test duration 300µs; duty cycle
≤3%.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS016
Embedded System
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