Monolithic Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N165 / 3N166
FEATURES
LLC
•
Very High Impedance
•
High Gate Breakdown
•
Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1)
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 2)
3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . .
±125
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±80V
Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
BOTTOM VIEW
TO-99
D
2
G
2
S
D
1
G
1
C
0180
2506
C
G2
G1
D2
D1
S
ORDERING INFORMATION
DEVICE SCHEMATIC
1
7
Part
3N165-66
X3N165-66
5
Package
Hermetic TO-99
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
3
8
4
0190
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
I
GSSR
I
GSSF
I
DSS
I
SDS
I
D(on)
V
GS(th)
V
GS(th)
r
DS(on)
PARAMETER
Gate Reverse Leakage Current
Gate Forward Leakage Current
Drain to Source Leakage Current
Source to Drain Leakage Current
On Drain Current
Gate Source Threshold Voltage
Gate Source Threshold Voltage
Drain Source ON Resistance
-5
-2
-2
MIN
MAX
10
-10
-25
-200
-400
-30
-5
-5
300
ohms
mA
V
pA
V
DS
= -20V
V
SD
= -20V, V
DB
= 0
V
DS
= -15V, V
GS
= -10V
V
DS
= -15V, I
D
= -10µA
V
DS
= V
GS
, I
D
= -10µA
V
GS
= -20V, I
D
= -100µA
UNITS
V
GS
= 40V
V
GS
= -40V
T
A
= +125
o
C
TEST CONDITIONS
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS018 REV A
3N165 / 3N166
LLC
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
g
fs
g
os
C
iss
C
rss
C
oss
R
E
(Y
fs
)
PARAMETER
Forward Transconductance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Common Source Forward Transconductance
1200
MIN
1500
MAX
3000
300
3.0
0.7
3.0
µs
V
DS
= -15V, I
D
= -10mA, f = 100MHz (Note 4)
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz (Note 4)
UNITS
µS
TEST CONDITIONS
V
DS
= -15V, I
D
= -10mA, f = 1kHz
MATCHING CHARACTERISTICS
SYMBOL
Y
fs1
/ Y
fs2
V
GS1-2
∆V
GS1−2
∆T
NOTES: 1.
2.
3.
4.
3N165
MIN
0.90
MAX
1.0
100
100
mV
µV/
o
C
UNITS
TEST CONDITIONS
V
DS
= -15V, I
D
= -500µA, f = 1kHz
V
DS
= -15V, I
D
= -500µA
V
DS
= -15V, I
A
= -500µA
T
A
= -55
o
C to +25
o
C
PARAMETER
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
Gate Source Threshold Voltage Differential
Change with Temperature
See handling precautions on 3N170 data sheet.
Per transistor.
Devices must not be tested at
±125V
more than once, nor longer than 300ms.
For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS018 REV A
ARM Technology
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