Preliminary
Datasheet
BCR8FM-14LJ
700V - 8A - Triac
Medium Power Use
Features
I
T (RMS)
: 8 A
V
DRM
: 800 V (Tj = 125C)
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
Insulated Type
Planar Passivation Type
Viso: 2000 V
R07DS0977EJ0100
Rev.1.00
Dec 03, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Washing machine, inversion operation of capacitor motor, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Note5
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Symbol
V
DRM
V
DSM
Ratings
8
80
26
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Voltage class
14
800
700
840
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Unit
V
V
V
Conditions
Tj = 125C
Tj = 150C
Conditions
Commercial frequency, sine full wave
360 conduction, Tc = 107C
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta=25C, AC 1 minute,
T
1
T
2
G terminal to case
R07DS0977EJ0100 Rev.1.00
Dec 03, 2012
Page 1 of 7
BCR8FM-14LJ
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
—
4.3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
C/W
V/s
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 12A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Tj = 150C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C/W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125C/150C
2.Rate of rise of off-state commutating voltage
(dv/dt)c =
4.0
A/ms
3.Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0977EJ0100 Rev.1.00
Dec 03, 2012
Page 2 of 7
BCR8FM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
80
Tj =
150°C
10
1
60
40
Tj =
25°C
10
0
20
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction
Time
(Cycles at
60Hz)
Gate
Trigger
Current (Tj
=
t°C)
×
100 (%)
Gate
Trigger
Current (Tj
=
25°C)
Gate Characteristics (I,
II
and
III)
Gate
Trigger
Current vs.
Junction Temperature
10
3
Typical Example
V
GM
=
10V
10
1
P
G(AV)
=
0.5W
P
GM
= 5W
I
GM
=
2A
Gate Voltage (V)
V
GT
=
1.5V
10
0
I
RGT
III
10
2
I
RGT
I
, I
FGT I
10
−1
I
FGT I
I
RGT
I
, I
RGT
III
10
2
V
GD
=
0.1V
10
3
10
4
10
1
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature
(°C)
Gate
Trigger
Voltage (Tj
=
t°C)
×
100 (%)
Gate
Trigger
Voltage (Tj
=
25°C)
Gate
Trigger
Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum
Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance
(°C/W)
10
2
5
10
3
10
4
4
3
10
2
2
1
10
1
–40
0
40
80
120
160
0
−1
10
10
0
10
1
10
2
Junction Temperature
(°C)
Conduction
Time
(Cycles at
60Hz)
R07DS0977EJ0100 Rev.1.00
Dec 03, 2012
Page 3 of 7
BCR8FM-14LJ
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
3
Preliminary
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
No Fins
14
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
−1
1
10
10
2
10
3
10
4
10
5
Conduction Time (Cycles at
60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
160
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60
t2.3
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
Ambient Temperature (°C)
Case Temperature (°C)
140
140
120
100
80
60
40
20
0
0
2
4
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
6
8
10
12
14
16
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction
Temperature
10
6
Typical Example
10
5
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
10
4
10
3
1.5
2.0
2.5
3.0
10
2
–40
0
40
80
120
160
RMS On-State Current (A)
Junction
Temperature (°C)
R07DS0977EJ0100 Rev.1.00
Dec 03, 2012
Page 4 of 7
BCR8FM-14LJ
Holding
Current vs.
Junction Temperature
Latching
Current vs.
Junction Temperature
10
3
Preliminary
Holding
Current (Tj
=
t°C)
×
100 (%)
Holding
Current (Tj
=
25°C)
10
3
Typical Example
Latching
Current (mA)
Distribution
10
2
T
2
+,
G
–
Typical Example
10
2
10
1
T
2
+,
G
+
Typical Example
T
2
–,
G
–
0
40
80
120
160
10
1
−40
0
40
80
120
160
10
0
–40
Junction Temperature
(°C)
Junction Temperature
(°C)
Breakover
Voltage (dv/dt
= xV/μs)
×
100 (%)
Breakover
Voltage (dv/dt
=
1V/μs)
Breakover
Voltage vs.
Junction Temperature
Breakover
Voltage vs.
Rate of Rise of Off-State Voltage (Tj
=
125°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
I Quadrant
III Quadrant
Typical Example
Tj =
125°C
Breakover
Voltage (Tj
=
t°C)
×
100 (%)
Breakover
Voltage (Tj
=
25°C)
160
140
120
100
80
60
40
20
0
−40
0
40
Typical Example
80
120
160
10
3
10
4
Junction Temperature
(°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover
Voltage (dv/dt
= xV/μs)
×
100 (%)
Breakover
Voltage (dv/dt
=
1V/μs)
Breakover
Voltage vs.
Rate of Rise of Off-State Voltage (Tj
=
150°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
I Quadrant
III Quadrant
Commutation Characteristics (Tj
=
125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Typical Example
Tj =
150°C
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
10
1
Minimum
Characteristics
Value
Typical Example
Tj =
125°C
I
T
= 4A
τ
= 500μs
V
D
=
200V
f
=
3Hz
I Quadrant
10
0
10
0
III Quadrant
10
1
10
2
10
3
10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0977EJ0100 Rev.1.00
Dec 03, 2012
Page 5 of 7
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