MMBT2222AW
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
NPN Silicon
General Purpose Transistor
FEATURE
SOT-323
A
3
3
Complementary PNP Type Available(MMBT2907AW)
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
1
L
Top View
C B
1
2
2
MARKING CODE
K3P / P1
K
E
D
F
G
H
J
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
75
40
6
600
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
10-Dec-2012 Rev. D
Page 1 of 4
MMBT2222AW
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
ELECTRICAL CHARACTERISTICS at Ta = 25°C
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter=Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
TEST CONDITION
I
C
=10μA, I
E
=0
I
C
=10 mA, I
B
= 0
I
E
=10μA, I
C
=0
V
CB
=70V, I
E
=0
V
EB
=35V, I
C
=0
V
EB
=3V, I
C
=0
V
CE
=10V, I
C
=-0.1mA
V
CE
=10V, I
C
=1mA
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
T
d
T
r
T
S
T
F
MIN.
75
40
6
MAX.
UNIT
V
V
V
100
100
100
35
50
75
100
40
1
0.3
2.0
1.2
300
8
10
25
225
60
300
nA
nA
nA
DC Current Gain
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=500mA
Collector-emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
V
CE
=20V, I
C
=20mA, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
V
cc
=30V, V
BE(Off)
=-0.5V
I
C
=150mA, I
B1
=15mA
V
cc
=30V, I
C
=150mA
I
B1
=- I
B2
=15mA
V
V
V
V
MHz
pF
nS
nS
nS
nS
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
10-Dec-2012 Rev. D
Page 2 of 4
MMBT2222AW
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
CHARACTERISTIC CURVES
10-Dec-2012 Rev. D
Page 3 of 4
MMBT2222AW
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
CHARACTERISTIC CURVES
10-Dec-2012 Rev. D
Page 4 of 4
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