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RJH60V2BDPP-M0_15

Description
600V - 12A - IGBT Application: Inverter
File Size99KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJH60V2BDPP-M0_15 Overview

600V - 12A - IGBT Application: Inverter

Preliminary
Datasheet
RJH60V2BDPP-M0
600V - 12A - IGBT
Application: Inverter
Features
Short circuit withstand time (6
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 12 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 75 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 12 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0760EJ0100
Rev.1.00
May 25, 2012
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
25
12
50
12
50
34
3.7
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0760EJ0100 Rev.1.00
May 25, 2012
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