NPN SILICON RF TRANSISTOR
NE85639 / 2SC4093
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN MINIMOLD
DESCRIPTION
JEITA
Part No.
The NE85639 / 2SC4093 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and
CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which
enables high-isolation gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
• High Power gain
½S
21e
½
2
= 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
• 4-pin minimold Package
ORDERING INFORMATION
Part Number
NE85639-A
2SC4093-A
NE85639-T1-A
2SC4093-T1-A
3 kpcs/reel
Quantity
50 pcs (Non reel)
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Supplying Form
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
200
150
65
to +150
Unit
V
V
V
mA
mW
C
C
T
j
T
stg
Note
Free air
Caution
:
Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10519EJ01V0DS (1st edition)
(Previous No. P10365EJ3V1DS00)
Date Published October 2004 CP(K)
The mark
shows major revised points.
NE85639 / 2SC4093
ELECTRICAL CHARACTERISTICS (T
A
= +25C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
½S
21e
½
NF
C
re
Note 2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 10 V, I
C
= 20 mA
50
120
1.0
1.0
250
A
A
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
V
CB
= 10 V, I
E
= 0 mA, f = 1.0 MHz
11
7.0
13
1.1
0.6
–
2.0
0.95
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
350
s, Duty Cycle
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
Range
R26/RBF
R26
50 to 100
Note
R27/RBG
R27
Note
R28/RBH
R28
Note
80 to 160
125 to 250
Note
Old Specification / New Specification
2
Data Sheet PU10519EJ01V0DS
NE85639 / 2SC4093
TYPICAL CHARACTERISTICS (T
A
= +25C, unless otherwise specified)
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10519EJ01V0DS
3
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