BAT54HT1G datasheet, PDF - EEWORLD Datasheet

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BAT54HT1G: Description0.2 A, 30 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size321KB，2 Pages; ManufacturerSUNMATE; Websitehttp://www.sunmate.tw/

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BAT54HT1G Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54HT1G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, MINIATURE, CASE 477-02, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	0.2000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0050 us
Maximum repetitive peak reverse voltage	30 V
Maximum average forward current	0.2000 A

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BAT54HT1G

200mA Surface Mount Schottky Barrier Diode

Features

C

H

B

A

M

L

K

J

Mechanical Data

·

Case

Molded Plastic

SOD-323

Dim

Min

Max

A

0.25

0.35

B

1.20

1.40

C

2.30

2.70

H

1.60

1.80

J

0.00

0.10

K

1.0

1.1

L

0.20

0.40

M

0.10

0.15

0°

8°

α

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Symbol

V

RRM

I

F(AV)

I

FSM

T

STG

T

J

Symbol

V

R

V

F

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Storage Temperature Range

Operating Junction Temperature

Parameter

Breakdown Voltage

Forward Voltage

@ T

A

= 25°C unless otherwise specified

Value

30

200

600

-65 to +150

-55 to +150

Units

V

mA

°C

Max.

240

320

400

500

0.8

2.0

10

5.0

Units

V

mV

V

µA

pF

ns

Test Conditions

I

R

= 10µA

I

F

= 0.1mA

I

F

= 1.0mA

I

F

= 10mA

I

F

= 30mA

I

F

= 100mA

V

R

= 25V

V

R

= 1V, f = 1.0MHz

I

F

= I

R

= 10mA, I

RR

= 1.0mA,

R

L

= 100Ω

Min.

30

I

R

C

T

t

rr

Reverse Leakage

Total Capacitance

Reverse Recovery Time

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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