BAT81-BAT83
30mA Axial Leaded Schottky Barrier Diodes
Features
·
Low forward voltage
·
High breakdown voltage
·
Guard ring protected
·
Hermetically-sealed leaded glass package
·
Low diode capacitance.
·
Pb / RoHS Free
A
B
A
D
DO-35
C
Mechanical Data
·
Case:
DO-34 Glass Case
·
Weight:
approx. 0.11g
Dim
A
B
C
D
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
BAT81
Continuous Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current at tp
≤1s
Non-repetitive Peak Forward Surge Current at tp
≤
10ms
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
BAT82
BAT83
@ T
A
= 25°C unless otherwise specified
Symbol
V
R
I
F
I
FRM
I
FSM
P
D
R
θ
JA
T
J
T
S
Value
40
50
60
30
(1)
150
(1)
500
430
(1)
Unit
V
mA
mA
mA
mW
°C/W
°C
°C
Max
200
0.41
1.0
1.6
Unit
nA
V
pF
200
(1)
(1)
125
-65 to + 150
Min
-
-
-
-
Typ
-
-
-
-
Parameter
Reverse Current
Forward Voltage
Diode Capacitance
Symbol
I
R
V
F
Cd
Test Condition
V
R
= V
Rmax
I
F
= 1mA
I
F
= 15mA
V
R
= 1V, f = 1MHz
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
1 of 2
Typical forward characteristics
Typical reverse characteristics
1000
Ta = 25
°
C
10
4
Forward Current , I
F
(mA)
100
10
Reverse Current , I
R
(nA)
10
3
Ta = 85
°
C
10
2
1
Ta = 25
°
C
10
0.1
1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0
10
20
30
40
50
60
Forward Voltage , V
F
(V)
Reverse Voltage , V
R
(V)
Typical diode capacitance as
a function of reverse voltage
2.0
Diode Capacitance , Cd (pF)
1.5
1.0
0.5
0
0
10
20
30
40
50
60
Reverse Voltage , V
R
(V)
2of2
Embedded System
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