BAT86
0.2A Axial Leaded Schottky Barrier Diodes
Features
·
For general purpose applications
·
This diodes features very low turn-on voltage
and fast switching. This devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
·
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
A
B
A
D
DO-35
Dim
A
B
C
D
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
C
Mechanical Data
·
Case:JEDEC DO--35,glass case
·
Polarity: Color band denotes cathode end
·
Weight: Approx. 0.13 gram
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbols
Continuous reverse voltage
Forw ard continuous current
@
T
A
=25
<=0.5,T
A
=25
Value
50.0
200
1)
500
1)
200
1)
125
c-55
---+ 125
c-55
---+ 150
UNITS
V
mA
mA
mw
V
R
I
F
I
FRM
P
tot
T
J
T
A
T
STG
Symbols
Min.
50.0
Repetitive peak forw ard current @ tp<1s,
Pow er dissipation @ T
A
=25
Junction temperature
Ambient operating temperature range
Storage temperature range
Typ.
Max.
UNITS
V
Reverse breakdow n voltage tested w ith 100
Forw ard voltage
Pulse test tp<300
@ I
F
=0.1mA
@ I
F
=1mA
@ I
F
=10mA
@ I
F
=30mA
@ I
F
=100mA
s, <2%
A pulses
V
R
V
F
0.2
0.275
0.365
0.46
0.7
0.3
0.38
0.45
0.6
0.9
5.0
8
5
300
1)
Leakage current V
R
=40V
Junction capacitance at V
R
=1V,f=1MHz
Reverse recovery time form I
F
=10mA to I
R
=10mA to I
R
=1mA
Thermal resistance junction to ambient air
I
R
C
J
t
rr
R
θ
JA
V
V
V
V
V
A
pF
ns
/W
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
1 of 1
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