BAT86S
200mA Surface Mount Schottky Barrier Diodes
Features
·
Integrated protection ring against static
discharge
·
Very low forward voltage
·
Lead (Pb)-free component
·
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
B
A
D
DO-35
Dim
A
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
C
Mechanical Data
·
Case:
DO35 Glass case
·
Weight:
approx. 125 mg
·
Cathode Band Color:
black
·
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
B
C
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Parameter
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
Parameter
Forward voltage
Test condition
t
p
≤
10 ms
t
p
≤
1 s
PCB mounting, l = 4 mm;
V
RWM
= 25 V, T
amb
= 50 °C
Test condition
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Symbol
V
R
I
FSM
I
FRM
I
F
I
FAV
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
C
D
Min
Value
50
5
500
200
200
Typ.
Max
300
380
450
600
900
5
8
Unit
V
A
mA
mA
mA
Unit
mV
mV
mV
mV
mV
µA
pF
Reverse current
Diode capacitance
V
R
= 40 V
V
R
= 1 V, f = 1 MHz
1 of 2
P - Reverse Power Dissipation (mW)
R
500
450
400
350
300
250
200
150
100
50
0
25
R
thJA
= 540 K/W
P
R
- Limit
at
80
%
V
R
P
R
- Limit
at 100 %
V
R
V
R
= 50
V
1000
T
j
= 125 °C
I
F
- Forward Current (A)
100
T
j
= 25 °C
10
1
0.1
50
75
100
125
150
15829
0
0.5
1.0
1.5
15827
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
10000
C
D
- Diode Capacitance (pF)
V
R
=
V
RRM
10
9
8
7
6
5
4
3
2
1
0
50
75
100
125
150
15830
f = 1 MHz
I
R
- Reverse Current (µA)
1000
100
10
1
25
15828
0.1
1
10
100
T
j
- Junction Temperature (°C)
V
R
- Reverse
Voltage
(V)
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
2 of 2
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