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BYT41B

Description
1.25 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size87KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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BYT41B Overview

1.25 A, 100 V, SILICON, RECTIFIER DIODE

BYT41A-BYT41M
1.0A Axial Leaded Super Fast Rectifier
Features
·
Controlled avalanche characteristics
·
Miniature axial leaded
·
Glass passivated
·
Hermetically sealed glass envelope
·
Low reverse current
·
High reverse voltage
D
A
B
A
C
Mechanical Data
·
Case: Molded Plastic
Dim
A
B
C
D
DO-41
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
@ T
A
= 25°C unless otherwise specified
Type
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
Symbol
V
R
=V
RRM
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
Parameter
Forward voltage
Reverse current
Reverse breakdown
voltage
t
p
=8.3 ms, half sinewave
Lead length l = 10 mm,
T
L
= 25
°
C
I
(BR)R
=1A, inductive load
I
FSM
I
FAV
E
R
T
j
=T
stg
Value
50
100
200
400
600
800
1000
30
1.25
10
–55...+175
Typ
Max
1.1
5
150
Unit
V
V
V
V
V
V
V
A
A
mJ
°
C
Unit
V
m
A
m
A
V
V
V
V
V
V
V
m
s
Test Conditions
I
F
= 1 A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=150
°
C
I
R
=100
m
A
Type
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
1 of 2
Symbol
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
Min
50
100
200
400
600
800
1000
2

BYT41B Related Products

BYT41B BYT41K BYT41M BYT41A BYT41D BYT41G BYT41J
Description 1.25 A, 100 V, SILICON, RECTIFIER DIODE 1.25 A, 800 V, SILICON, RECTIFIER DIODE 1.25 A, 1000 V, SILICON, RECTIFIER DIODE 1.25 A, 50 V, SILICON, RECTIFIER DIODE 1.25 A, 200 V, SILICON, RECTIFIER DIODE 1.25 A, 400 V, SILICON, RECTIFIER DIODE 1.25 A, 600 V, SILICON, RECTIFIER DIODE
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