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BYV26B

Description
1 A, 400 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size151KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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BYV26B Overview

1 A, 400 V, SILICON, SIGNAL DIODE

BYV26A-BYV26E
1.0A Axial Leaded Super Fast Rectifier
Features
·
Low cost
·
Diffused junction
·
·
·
·
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and sim ilar solvents
D
A
B
A
C
Mechanical Data
·
Case: JEDEC DO-41,molded plastic
·
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
DO-41
Dim
A
B
C
D
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
·
Polarity: Color band denotes cathode
·
Weight: 0.012 ounces,0.34 gram s
·
Mounting position: Any
All Dimensions in mm
@ T
A
= 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BYV26A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5
mm lead length,
@T
A
=75
BYV26B BYV26C BYV26D
400
280
400
600
420
600
1.0
800
560
800
BYV26E
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
30
45
2.5
5.0
150.0
75
40
100
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1 of 2

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