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EGP20M

Description
2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size104KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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EGP20M Overview

2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

EGP20A-EGP20M
2.0A Axial Leaded High Efficiency Rectifier
Features
·
·
·
·
·
·
·
GPRC (Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage , high current capability
Low leakage current
High surge current capability
o
High temperature soldering guaranteed: 260 C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
·
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
A
B
A
D
C
DO-15
Dim
A
B
C
D
Min
25.40
5.50
0.686
2.60
Max
¾
7.62
0.889
3.60
Mechanical Data
·
Case :
JEDEC DO-
15
molded plastic over glass body
·
Terminals :
Plated axial leads , solderable per MIL-STD-750,
Method 2026
·
Polarity :
Color band denotes cathode end
·
Mounting Position :
Any
·
Weight :
0.015 ounes , 0.4 gram
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Ratings at 25 C ambient temperature
SYMBOLS
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
I
(AV)
0.375" (9.5mm) lead length (SEE FIG.1)
Peak forward surge current 8.3ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0 A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
T
A
=25 C
o
T
A
=125 C
o
T
A
=150 C
o
o
@ T
A
= 25°C unless otherwise specified
EGP20
A
50
35
50
B
100
70
100
D
200
140
200
F
300
210
300
G
400
280
400
J
600
420
600
K
800
560
800
M
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
V
RRM
V
RMS
V
DC
2.0
65
1.0
5
30
100
50
45
40
15
-65 to +175
1.25
60
1.7
5
100
-
75
Amps
Volts
V
F
I
R
uA
trr
C
J
R
R
JA
JL
nS
pF
o
C/W
o
T
J
,T
STG
-55 to +150
C
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, P.C.B. mounted.
1 of 2

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EGP20M EGP20B EGP20C EGP20D EGP20F EGP20G EGP20J EGP20A EGP20K
Description 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-204AC 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AC 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-204AC 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC
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