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ESJA18-08

Description
0.005 A, 8000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size291KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
Download Datasheet View All

ESJA18-08 Overview

0.005 A, 8000 V, SILICON, SIGNAL DIODE

ESJA18-08
5mA Axial Leaded High Voltage Diode
Features
·
Ultra high speed switching
·
Low VF
·
High surge resisitivity for CRT discharge
·
High reliability design
·
Ultra small pakage
Mechanical Data
Maximum Ratings and Electrical Characteristics
Items
Repetitive Peak
Reverse
Voltage
Average Output Current
Surge
Current
Junction Temperature
Allowable Operation Case Temperature
Storage Temperature
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
Symbols
V
RRM
I
O
I
FSM
T
j
Tc
T
stg
Symbols
V
F
IR
trr
Cj
@ T
A
= 25°C unless otherwise specified
Condition
Ratings
8
5
Units
kV
mA
A
°C
°C
°C
Units
V
µA
µs
pF
Ta=25°C,Resistive Load
10mS Sine-half wave
peak value
0.5
120
100
-40 to +120
Conditions
I
F
=10mA
V
R
=VRRM
Ta=25°C,I
F
=2mA,I
R
=4mA
Ta=25°C,V
R
=0V,f=1MHz
Retings
28
2
0.045
2
1 of 2

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Index Files: 2589  918  2555  2535  139  53  19  52  3  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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