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BAS16HT1G

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size317KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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BAS16HT1G Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

BAS16HT1G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 477-02, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.2000 A
BAS16HT1G
200mA Surface Mount Switching Diode
Features
C
H
B
A
M
L
K
J
Mechanical Data
·
Case
Molded Plastic
SOD-323
Dim
Min
Max
A
0.25
0.35
B
1.20
1.40
C
2.30
2.70
H
1.60
1.80
J
0.00
0.10
K
1.0
1.1
L
0.20
0.40
M
0.10
0.15
α
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
Symbol
V
R
V
F
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Parameter
Breakdown Voltage
Forward Voltage
@ T
A
= 25°C unless otherwise specified
Value
85
200
600
-65 to +150
-55 to +150
Test Conditions
I
R
= 5.0µA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 25V, T
A
= 150°C
V
R
= 75V, T
A
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
Min.
85
Max.
715
855
1.0
1.25
1.0
30
50
2.0
6.0
Units
V
mA
mA
°C
°C
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
I
R
Reverse Leakage
C
T
t
rr
Total Capacitance
Reverse Recovery Time
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
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