DIP Type
TRIACS Thyristor
BTA16-600
TO-220
3.30
±
0.10
10.16
±
0.20
Thyristor
ø3.18
±
0.10
2.54
±
0.20
(0.70)
●
Repetitive peak off-state voltages :600V
●
RMS on-state current :16A
15.80
±
0.20
(1.00x45 )
9.75
±
0.30
MAX1.47
0.80
±
0.10
(3
0.35
±
0.10
2
1
#1
3
0.50
–0.05
2.54TYP
[2.54
±
0.20
]
+0.10
2.76
±
0.20
2.54TYP
[2.54
±
0.20
]
9.40
±
0.20
1. T1
2. T2
3. Gate
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Repetitive Forward and Reverse Blocking Voltages
RMS on-state Current
Non-Repetitive Peak on-state Current @ 50Hz, t
p
=20ms
junction Temperature
Storage Temperature range
Symbol
V
DRM
V
RRM
I
T(RMS)
I
TSM
T
J
T
stg
Rating
600
16
160
125
-40 to 150
Unit
V
A
4.70
±
0.20
℃
■
Electrical Characteristics
(Ta = 25℃, unless otherwise noted.)
Parameter
Repetitive Peak off-state Voltages
Off-state Leakage Current
On-state Voltage
Gate Trigger Voltage
Symbol
V
DRM
V
RRM
I
D
,I
R
V
TM
V
GT
I
D
=I
R
=10uA
V
DRM=
V
RRM
=V
D
I
T
=22.5A
T
2
+,G+
V
D
=12V, R
L
=100Ω
T
2
+,G-
T
2
-,G-
T
2
+,G+
Gate Trigger Current
Holding Current
Critical rate of rise of off state voltage
Critical rate of rise of commutating voltage
Trigger voltage
I
GT
I
H
dV/dt
(dV/dt)c
V
GD
V
D
=12V, R
L
=100Ω
I
GT
=500mA
V
DM
=67%V
DRM
Gate open T
j
=110℃
V
DM
=400V T
j
=110℃
(dI/dt)c =7A/ms Gate open
V
D
=1/2 V
DRM
500
V/us
10
0.2
V
T
2
+,G-
T
2
-,G-
Test Conditions
Min
600
0.1
1.55
1
1
1
50
50
50
50
mA
V
Typ.
Max
Unit
V
mA
15.87
±
0.20
■
Features
6.68
±
0.20
0
)
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1
DIP Type
TRIACS Thyristor
BTA16-600
■
Typical Characterisitics
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
8
6
4
18
16
14
Thyristor
Figure 2: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
BTA
12
10
I
T(RMS)
(A)
2
0
0
25
50
T
C
(°C)
75
100
125
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
I
T(RMS)
(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
(S=1cm
2
)
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1E+0
Z
th(j-c)
Z
th(j-a)
1E-1
T
C
(°C)
75
100
125
1E-2
1E-3
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
5E+2
Figure 5: On-state characteristics (maximum
values)
I
TM
(A)
200
100
T
j
max.
V
to
= 0.85V
R
d
= 25 m
Ω
Figure 6: Surge peak on-state current versus
number of cycles
I
TSM
(A)
180
160
140
t=20ms
T
j
= T
j
max.
120
100
T
j
= 25°C
.
Non repetitive
T
j
initial=25°C
One cycle
10
80
60
40
Repetitive
T
C
=85°C
1
0.5
1.0
1.5
2.0
V
TM
(V)
2.5
3.0
3.5
4.0
4.5
5.0
20
0
1
10
Number of cycles
100
1000
2
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DIP Type
TRIACS Thyristor
BTA16-600
■
Typical Characterisitics
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
3000
Thyristor
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
2.5
I
TSM
(A), I
2
t (A
2
s)
T
j
initial=25°C
dI/dt limitation:
50A/µs
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.0
I
GT
I
TSM
1000
1.5
I & I
H
L
1.0
I
2
t
0.5
t
p
(ms)
100
0.01
0.10
1.00
10.00
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & Logic level
types)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
B
C
SW
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
(dI/dt)c [T
j
] / (dI/dt)c [T
j
s pecified]
6
5
4
3
2
1
1.4
1.2
1.0
0.8
0.6
0.4
0.
1
1.
0
10.
0
100.
0
(dV/dt)c (V/µs)
0
0
25
50
T
j
(°C)
75
100
125
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
R
th(j-a)
(°C/W)
S(cm²)
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