SMD Type
PIN Diodes
BAP64-04/05/06
(KAP64-04/05/06)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
■
Features
+0.2
2.8
-0.1
3
●
RF resistor for RF attenuators and switches
●
Low diode capacitance
●
Low diode forward resistance
●
Low series inductance
●
For applications up to 3 GHz.
+0.2
1.6
-0.1
●
High voltage, current controlled
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.02
0.15
-0.02
BAP64-04
BAP64-05
BAP64-06
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation @ Ts = 90 °C
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
R
I
F
P
D
R
θJA
T
J
T
stg
Rating
175
100
250
500
150
-65 to 150
Unit
V
mA
mW
℃/W
℃
+0.1
0.68
-0.1
0-0.1
+0.2
1.1
-0.1
www.kexin.com.cn
1
SMD Type
PIN Diodes
BAP64-04/05/06
(KAP64-04/05/06)
■
Electrical Characteristics Ta = 25℃
Parameter
Forward voltage
Reverse voltage leakage current
Symbol
V
F
I
R
I
F
= 50 mA
V
R
=175V
V
R
=20 V
I
F
= 0.5 mA , f = 100 MHz
Diode forward resistance
(Note.1)
r
D
I
F
= 1 mA , f = 100 MHz
I
F
= 10 mA , f = 100 MHz
I
F
= 100 mA , f = 100 MHz
V
R
= 0 V, f= 1 MHz
Diode capacitance
C
d
V
R
= 1 V, f= 1 MHz
V
R
= 20 V, f= 1 MHz
Series inductance
Charge carrier life time
L
S
T
L
I
F
=10mA, f=100MHz
Diodes
Test Conditions
Min
Typ
Max
1.1
10
1
40
20
3.8
1.35
Unit
V
uA
Ω
0.52
0.5
0.35
1.4
1.55
nH
us
pF
when switched from I
F
= 10 mA to
I
R
= 6mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
Note.1: Guaranteed on AQL basis: inspection level S4, AQL 1.0.
■
Marking
NO
Marking
BAP64-04
4K
BAP64-05
5K
BAP64-06
6K
2
www.kexin.com.cn
NXP MCU
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