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RQJ0203WGDQA_15

Description
Silicon P Channel MOS FET Power Switching
File Size170KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RQJ0203WGDQA_15 Overview

Silicon P Channel MOS FET Power Switching

Preliminary
Datasheet
RQJ0203WGDQA
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 142 mΩ typ (V
GS
= –4.5 V, I
D
= –1.1 A)
Low drive current
High speed switching
2.5 V gate drive
R07DS0292EJ0500
Rev.5.00
Jan 10, 2014
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
G
1
2
S
1
2
1. Source
2. Gate
3. Drain
Note:
Marking is “WG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
–20
+8 / –12
–2.1
–6.0
–2.1
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW
10
μs,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
R07DS0292EJ0500 Rev.5.00
Jan 10, 2014
Page 1 of 7
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