Preliminary
Datasheet
RQJ0602EGDQA
Silicon P Channel MOS FET
Power Switching
Features
•
Low on-resistance
R
DS(on)
= 490 mΩ typ (V
GS
= –10 V, I
D
= –0.55 A)
•
Low drive current
•
High speed switching
•
4.5 V gate drive
R07DS0299EJ0600
Rev.6.00
Jan 10, 2014
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
S
1
2
G
1. Source
2. Gate
3. Drain
Note:
Marking is “EG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(Pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
–60
+10 / –20
–1.1
–3
–1.1
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
R07DS0299EJ0600 Rev.6.00
Jan 10, 2014
Page 1 of 7
RQJ0602EGDQA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
–60
+10
–20
—
—
—
–1.0
—
—
0.7
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
490
613
1.2
145
24
11
23
24
28
19
3.0
0.5
0.6
–0.9
Max
—
—
—
+10
–10
–1
–2.0
613
854
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= +100
μA,
V
DS
= 0
I
G
= –100
μA,
V
DS
= 0
V
GS
= +8 V, V
DS
= 0
V
GS
= –16 V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –0.55 A, V
GS
= –10 V
Note3
I
D
= –0.55 A, V
GS
= –4.5 V
Note3
I
D
= –0.55 A, V
DS
= –10 V
Note3
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
I
D
= –0.5 A, V
GS
= –10 V,
R
L
= 20
Ω,
Rg = 4.7
Ω
V
DD
= –10 V, V
GS
= –10 V,
I
D
= –1.1A
I
F
= –1.5 A, V
GS
= 0
Note3
R07DS0299EJ0600 Rev.6.00
Jan 10, 2014
Page 2 of 7
RQJ0602EGDQA
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.2
–100
Operation in this area
–10 is limited by R
DS(on)
0
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
0.8
0.6
0.4
0.2
0
Drain Current I
D
(A)
1.0
–1
D
C
O
1
m
s
μ
s
PW
=
10
s
m
ra
pe
–0.1
Tc = 25
°
C
tio
n
0
25
50
75
100
125
150
–0.01
–0.01
–0.1
–1
–10
–100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–10 V
Typical Transfer Characteristics
(1)
–1.0
V
DS
= –10 V
Pulse Test
–1.0
–0.8
–4.5 V
–3.1 V
–3 V
Drain Current I
D
(A)
–2.8 V
Drain Current I
D
(A)
–2.9 V
–0.8
–0.6
–2.7 V
–2.6 V
–2.5 V
–0.6
Tc = 75°C
–0.4
25°C
–0.2
–25°C
–0.4
–0.2
Pulse Test
Tc = 25
°
C
–2.4 V
–2.3 V
V
GS
= 0 V
0
0
–1
–2
–3
–4
–5
0
0
–1
–2
–3
–4
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
–0.1
V
DS
= -10 V
Pulse Test
Case Temperature
–2.5
Drain Current I
D
(A)
–2.0
–0.01
Tc = 75°C
25°C
–25°C
I
D
= –10 mA
–1 mA
–1.5
–0.001
–1.0
V
DS
= –10 V
Pulse Test
–0.5
–25
0
25
50
75
–0.1 mA
–0.0001
0
–0.5
–1
–1.5
–2
–2.5
–3
100 125
150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0299EJ0600 Rev.6.00
Jan 10, 2014
Page 3 of 7
RQJ0602EGDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Tc = 25°C
–1.5
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage V
DS(on)
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
–2.0
10
Pulse Test
Tc = 25°C
3
–1.0
I
D
= –1 A
–0.5 A
–0.2 A
1.0
V
GS
= –4.5 V
–10 V
–0.5
0.3
0
0
–4
–8
–12
–16
–20
0.1
–0.1
–0.3
–1
–3
–10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(mΩ)
1200
Pulse Test
V
GS
= –4.5 V
1000
I
D
= –1.0 A
–0.5 A
–0.2 A
Drain to Source on State Resistance
R
DS(on)
(mΩ)
1000
900
800
700
600
500
400
300
–25
–0.5 A
–0.2 A
Pulse Test
V
GS
= 10 V
I
D
= –1 A
800
600
400
–25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
–1000
10
Pulse Test
V
DS
= –10 V
–25°C
1
25°C
Tc = 75°C
Zero Gate Voltage Drain current I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Pulse Test
V
GS
= 0 V
V
DS
=
–
60 V
–100
–10
0.1
–0.1
–0.3
–1.0
–1
–25
0
25
50
75
100
125 150
Drain Current I
D
(A)
Case Temperature Tc (°C)
R07DS0299EJ0600 Rev.6.00
Jan 10, 2014
Page 4 of 7
RQJ0602EGDQA
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
V
DD
= –10 V
–20
–25 V
–50 V
–60
Preliminary
Switching Characteristics
Gate to Source Voltage V
GS
(V)
0
1000
V
DD
= –10 V
V
GS
= –10 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
td(on)
10 tr
tf
td(off)
0
–40
–25 V
–10 V
Switching Time t (ns)
V
DD
= –50 V
–4
–8
100
V
DS
V
GS
I
D
= –1.1 A
Tc = 25°C
0
0.8
1.2
2.4
2.8
3.2
–12
–80
–16
–100
–20
4.0
1
–0.01
–0.1
–1
–10
Gate Charge Qg (nC)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
V
GS
= 0 V
f = 1 MHz
230
220
210
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
100
Ciss
Ciss (pF)
200
190
180
170
V
DS
= 0 V
f = 1 MHz
–5
0
5
10
10
Coss
Crss
1
0
–10
–20
–30
–40
–50
160
–10
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
–1.0
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–1.0
V
GS
= 0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–25
–1 mA
I
D
= –10 mA
Pulse Test
Tc = 25°C
–0.8
–10 V
–0.6
V
GS
= 0 V, 5 V
–0.4
V
GS
= –5 V
–0.2
0
0
Body-Drain Diode Forward Voltage V
SDF
(V)
Reverse Drain Current I
DR
(A)
–0.4
–0.8
–1.2
–1.6
–2.0
0
25
50
75
100 125
150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0299EJ0600 Rev.6.00
Jan 10, 2014
Page 5 of 7
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