Preliminary
Datasheet
RQK0606KGDQA
Silicon N Channel MOS FET
Power Switching
Features
•
Low on-resistance
R
DS(on)
= 173 mΩ typ.(at V
GS
= 4.5 V, I
D
= 0.8 A)
•
Low drive current
•
High speed switching
•
V
DSS
≥
60 V and capable of 2.5 V gate drive
R07DS0310EJ0300
Rev.3.00
Jan 10, 2014
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
2
G
1. Source
2. Gate
3. Drain
S
1
Notes: Marking is “KG“.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
60
±12
1.5
6
1.5
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW
≤
10
μs,
Duty cycle
≤
1%
2. When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
R07DS0310EJ0300 Rev.3.00
Jan 10, 2014
Page 1 of 8
RQK0606KGDQA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to Source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
60
+12
–12
—
—
—
0.4
—
—
2.3
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
173
207
4
200
25
14
11
27
31
4
2.2
0.4
0.7
0.8
Max
—
—
—
+10
–10
1
1.4
225
290
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
V
μA
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= +100
μA,
V
DS
= 0
I
G
= –100
μA,
V
DS
= 0
V
GS
= +10 V, V
DS
= 0
V
GS
= –10 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.8 A, V
GS
= 4.5 V
Note3
I
D
= 0.8 A, V
GS
= 2.5 V
Note3
I
D
= 0.8 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 0.8 A
V
GS
= 10 V
R
L
= 12.5
Ω
Rg = 4.7
Ω
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 1.5 A
I
F
= 1.5 A, V
GS
= 0
Note3
R07DS0310EJ0300 Rev.3.00
Jan 10, 2014
Page 2 of 8
RQK0606KGDQA
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
Maximum Safe Operation Area
100
30
10
μs
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
Test Condition :
When using the glass epoxy board
(FR-4 40 x 40 x 1 mm)
10
3
1
0.3
0.1
0.03
Operation in this area
0.01
is limited by R
DS(on)
0.003
Ta = 25°C
0.001
0.01 0.03 0.1 0.3
1shot pulse
10
PW
0
1
=
10
0.6
m
μ
s
s
DC
0.4
Op
m
s
er
at
ion
0.2
0
0
25
50
75
100 125 150 175
1
3
10 30 100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10 V
5V
7V
3.0 V
2.8 V
Typical Transfer Characteristics
(1)
8
Drain Current I
D
(A)
Drain Current I
D
(A)
8
2.2 V
2.6 V
2.4 V
6
–25°C
25°C
Tc = 75°C
6
2.0 V
1.8 V
4
4
1.6 V
2
Pulse Test
Tc = 25
°
C
1.4 V
V
GS
= 0 V
2
V
DS
= 10 V
Pulse Test
0
0
2
4
6
8
0
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
1
V
DS
= 10 V
Pulse Test
Case Temperature
10
Drain Current I
D
(A)
0.1
0.01
Tc = 75°C
0.001
25°C
0.0001
–25°C
I
D
= 10 mA
1
1 mA
0.1 mA
V
DS
= 10 V
Pulse Test
0
–25
0
25
50
75
100 125 150
0.00001
0
0.5
1
1.5
2
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0310EJ0300 Rev.3.00
Jan 10, 2014
Page 3 of 8
RQK0606KGDQA
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
600
400
2A
1.5 A
V
GS
= 2.5 V
200
1A
I
D
= 0.5 A
10 A
100
0.1
1
4.5 A
10
0
0
2
4
6
8
10
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
500
Pulse Test
V
GS
=
4.5
V
400
I
D
= 2 A
300
1.5 A
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
500
Pulse Test
V
GS
= 2.5 V
I
D
= 2 A
1.5 A
400
300
1A
200
0.5 A
200
1A
0.5 A
100
–25
0
25
50
75
100 125 150
100
–25
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
V
DS
= 60 V
Forward Transfer Admittance
|yfs| (S)
10
Pulse Test
V
DS
= 10 V
–25°C
Zero Gate Voltage Drain current
I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
1000
25°C
1
100
Tc = 75°C
10
0.1
0.01
0.1
1
10
1
–25
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
R07DS0310EJ0300 Rev.3.00
Jan 10, 2014
Page 4 of 8
RQK0606KGDQA
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
80
V
GS
60
V
DD
= 50 V
40
25 V
10V
20
I
D
=
1.5
A
Tc = 25°C
4
6
8
0
10
4
25 V
V
DD
= 50 V
8
10 V
12
16
1000
V
GS
= 4.5 V, V
DD
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
Tc = 25°C
100
tf
td(off)
td(on)
10
tr
Preliminary
Switching Characteristics
0
V
DS
0
2
Switching Time
t (ns)
1
0.01
0.1
1
10
Gate Charge Qg (nc)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
450
Input Capacitance vs.
Gate to Source Voltage
Ciss1, Coss, Crss (pF)
Ciss
400
Ciss2 (pF)
100
350
Coss
10
Crss
V
GS
= 0 V
f = 1 MHz
300
V
DS
= 0 V
f = 1 MHz
1
0
10
20
30
40
50
60
250
–10 –8 –6 –4 –2 0
2
4
6
8 10
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
10
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
V
GS
= 0
0.6
0.5
0.4
0.3
0.2
0.1
0
–25
1 mA
Reverse Drain Current I
DR
(A)
Pulse Test
Tc = 25°C
8
6
10 V
4
4.5 V
2.5 V
2
V
GS
= –2.5 V,
–4.5 V,
–10 V
V
GS
= 0 V
0
0.4
0.8
1.2
1.6
2.0
Body-Drain Diode Forward Voltage V
SDF
(V)
I
D
= 10 mA
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0310EJ0300 Rev.3.00
Jan 10, 2014
Page 5 of 8
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