DATA SHEET
SEMICONDUCTOR
SB3030PT~SB30100PT
30 AMPERE SCHOTTKY BARRIER RECTIFIERS
Features
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Schottky Barrier Chip
Guard Ring for Transient Protection
High Current Capability, Low Forward
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
.645(16.4)
.625(15.9)
.323(8.2)
.313(7.9)
10
0
TO-3P
Unit:inch(mm)
.199(5.05)
.175(4.45)
30
0
10
TYP
0
.839(21.30)
.819(20.80)
1
2
3
.142(3.60)
.125(3.20)
.086(2.18)
.076(1.93)
.126(3.2)
.110(2.8)
BOTH SIDES
Mechanical Data
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Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: As Marked on Body
Weight: 5.6 grams (approx.)
Mounting Position: Any
Marking: Type Number
.170(4.3)
.145(3.7)
.095(2.40)
.798(20.25)
.777(19.75)
.225(5.7)
.204(5.2)
.050(1.25)
.045(1.15)
.030(0.75)
.017(0.45)
AC
Positive CT
AC
+
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 95°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
JC
T
j
, T
STG
SB
SB
SB
SB
SB
SB
3030PT 3040PT 3050PT 3060PT 3080PT 30100PT
30
21
40
28
50
35
30
275
0.55
0.5
75
1100
2.0
-55 to +150
0.85
60
42
80
56
100
70
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
@I
F
= 15A
@T
A
= 25°C
@T
A
= 100°C
mA
pF
K/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
http://www.yeashin.com
1
REV.02 20150105
DEVICE CHARACTERISTICS
SB3030PT~SB30100PT
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
30
I
(AV)
, AVERAGE RECTIFIED CURRENT (A)
100
24
SB3030PT - SB3060PT
10
18
SB3080PT - SB3100PT
12
1.0
6
0
0
100
50
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
150
T
j
= 25°C
Pulse width = 300 µs
2% duty cycle
0.1
0.2
0.4
0.6
0.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics per Element
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
300
C
j
, JUNCTION CAPACITANCE (pF)
8.3 ms single half-sine-wave
JEDEC method
4000
T
j
= 25°C
f = 1MHz
250
200
1000
150
100
50
100
0
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
1
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
100
T
C
= 100°C
10
T
C
= 75°C
1.0
T
C
= 25°C
0.1
0.01
120
40
80
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics per Element
2
0
http://www.yeashin.com
REV.02 20150105
Real-time operating system RTOS
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