SMD Type
Switching Diodes
BAS511
(KAS511)
SOD-323
Diodes
Unit: mm
■
Features
●
Silicon epitaxial planar diode
●
High switching speed: trr≤4ns
●
Low forward drop voltage and low leakage current
●
“Green” device and RoHS compliant device
●
Available in full lead (Pb)-free device
0.475
0.
-0.05
3
+0.05
+0.1
1.7
-0.1
+0.05
0.85
-0.05
+0.1
2.6
-0.1
1.0max
0.375
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Average Forward Rectified Current
Forward Current
Peak Forward Surge Current
Non-repetitive peak forward surge current(t=10ms)
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
RM
V
R
I
O
I
F
I
FM
I
FSM
P
d
R
θJA
T
J
T
stg
Rating
85
80
100
100
300
2
150
830
150
-55 to 150
A
mW
℃/W
℃
mA
Unit
V
■
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
(Note.1)
Symbol
V
R
V
F1
V
F2
V
F3
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Note.1: Pulse test: tP≤380us, Duty cycle≤2%
Note.2: Pulse test: tP≤5ms, Duty cycle≤2%
I
R1
C
j
t
rr
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 80 V
I
F
=10mA
(Note.2)
V
R
= 0 V, f= 1 MHz
Test Conditions
I
R
= 100 uA
Min
85
0.6
0.7
0.9
1.2
0.5
4
4
uA
pF
ns
V
Typ
Max
Unit
■
Marking
Marking
S1*
0.
1
+0.
05
-0.
02
1.
-0.11
3
+0.
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