Elektronische Bauelemente
RoHS Compliant Product
BC556, B, C
BC557, A, B, C
BC558, A, B, C
TO-92
A suffix of "-C" specifies halogen & lead-free
FEATURES
PNP Transistor
Power dissipation
P
CM:
0.625
W (Tamb=25℃)
Collector current
-
0.1
A
I
CM:
Collector-base voltage
BC556
-80
V
V
CBO
:
BC557
-50
V
BC558
-30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
BC556
BC557
BC558
Collector-emitter breakdown voltage
BC556
BC557
BC558
Emitter-base breakdown voltage
Collector cut-off current
BC556
BC557
BC558
Collector cut-off current
BC556
BC557
BC558
Emitter cut-off current
BC556
BC557
BC558
DC current gain
BC556
BC557
BC558
BC557A/558A
BC556B/BC557B/BC558B
BC556C/BC557C/BC558C
I
EBO
V
EB
=
-5V,
I
C
=0
I
CEO
I
CBO
V
EBO
V
CEO
=
- 2mA
, I
B
=0
V
CBO
1
2
3
1 2
3
1. COLLECTOR
2. BASE
3
.
EMITTER
unless
Symbol
otherwise
Test
specified)
MIN
-80
MAX
UNIT
conditions
Ic=
-100µA
, I
E
=0
-50
-30
-65
-45
-30
V
V
I
E
=
-100µA,
I
C
=0
V
CB
=
-70V,
I
E
=0
V
CB
=
-45
V, I
E
=0
V
CB
=
-25V,
I
E
=0
V
CE
=
-60
V, I
B
=0
V
CE
=
-40
V, I
B
=0
V
CE
=
-25
V, I
B
=0
-6
-0.1
V
µA
-0.1
µA
-0.1
120
120
120
120
180
420
500
800
800
220
460
800
-0.3
-1
µA
h
FE(1)
V
CE
=-5V, I
C
=
-2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=-100 mA, I
B
=
-5mA
I
C
=
-100
mA, I
B
=-5mA
V
CE
=
-5V,
I
C
=
-10mA
V
V
Transition frequency
f
T
f =
100MHz
150
MHz
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
Elektronische Bauelemente
BC556, B, C
BC557, A, B, C
BC558, A, B, C
Typical Characteristics
-50
-45
1000
I
B
= -400
µ
A
I
B
= -350
µ
A
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
-40
-35
-30
-25
-20
-15
-10
-5
-0
-2
-4
-6
-8
-10
h
FE
, DC CURRENT GAIN
I
B
= -300
µ
A
I
B
= -250
µ
A
I
B
= -200
µ
A
I
B
= -150
µ
A
I
B
= -100
µ
A
I
B
= -50
µ
A
100
10
-12
-14
-16
-18
-20
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-100
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
I
C
= -10 I
B
V
CE
= -5V
-10
-0.1
-1
V
CE
(sat)
-0.01
-0.1
-0.1
-1
-10
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
C
ob
(pF), CAPACITANCE
10
f=1MHz
I
E
= 0
V
CE
= -5V
100
1
-1
-10
-100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
3
Elektronische Bauelemente
BC556, B, C
BC557, A, B, C
BC558, A, B, C
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b
φ
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
1.270TYP
2.440
14.100
0.000
2.640
14.500
1.600
0.380
4.700
Max
3.700
1.400
0.550
0.510
4.700
Min
L
Dimensions In Inches
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.050TYP
0.096
0.555
0.000
0.104
0.571
0.063
0.015
0.130
0.043
0.015
0.014
0.173
0.135
0.169
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
C
Page
3
of
3
Microcontroller MCU
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