BAS16V
0.3A , 100V
Elektronische Bauelemente
Plastic-Encapsulated Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast switching speed
For General Purpose Switching Applications
High Conductance
B
A
SOT-563
MARKING
D
J
G
F
H
E
KAM
C
PACKAGE INFORMATION
REF.
Package
SOT-563
MPQ
3K
Leader Size
7 inch
A
B
C
D
E
Millimeter
Min.
Max.
1.50
1.70
1.50
1.70
0.525
0.60
1.10
1.30
-
0.05
REF.
F
G
H
J
Millimeter
Min.
Max.
0.09
0.16
0.45
0.55
0.17
0.27
0.10
0.30
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Non-Repetitive Peak reverse voltage
Maximum Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
RMS Reverse Voltage
Peak forward Continuous current
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single Half
t=1.0µs
Sine-Wave Super Imposed on Rated Load (JEDEC
t=1.0s
Method)
Power dissipation
Thermal Resistance Junction to Ambient
Operating Junction and storage temperature range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
F(AV)
I
FSM
Value
100
75
75
75
53
300
200
2.0
Unit
V
V
V
V
V
mA
mA
A
1.0
P
D
R
θJA
T
J
,T
STG
150
833
150,-65~150
mW
K/W
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jul-2011 Rev. A
Page 1 of 2
BAS16V
0.3A , 100V
Elektronische Bauelemente
Plastic-Encapsulated Transistors
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Symbol
V
(BR)R
V
F1
V
F2
V
F3
V
F4
I
R1
I
R2
C
D
T
RR
Min.
75
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
0.715
0.855
1
1.25
1
0.025
2.0
4.0
Unit
V
Test Condition
I
R
=100µA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0 , f=1MHz
I
F
=I
R
=10mA,
I
RR
=0.1 x I
R
, R
L
=100
Forward Voltage
V
Reverse Voltage Leakage Current
Diode Capacitance
Reverse Recovery Time
µA
pF
nS
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jul-2011 Rev. A
Page 2 of 2
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