SMD Type
Dual N-Channel
MOSFET
KX4N03W
TSSOP-8
MOSFET
Unit: mm
■
Features
●
Low
C
iss
C
iss
= 580 pF TYP.
●
Built-in G-S protection diode against ESD
●
Low on-state resistance
6.45
+0.1
-0.1
4.45
+0.1
-0.1
R
DS(on)1
= 67.0 m
R
DS(on)2
= 86.0 m
R
DS(on)3
= 95.0 m
Drain1
MAX. (V
GS
= 10 V, I
D
= 2.0 A)
MAX. (V
GS
= 4.5 V, I
D
= 2.0 A)
MAX. (V
GS
= 4.0 V, I
D
= 2.0 A)
Drain2
Body
Diode
Body
Diode
0.15
+0.03
-0.03
8
5
1
2, 3
4
5
6, 7
8
:Drain1
:Source1
:Gate1
:Gate2
:Source2
:Drain2
Gate1
Gate
Protection
Diode
Source1
Gate2
Gate
Protection
Diode
Source2
1
4
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1: PW
≤
10 μs, Duty Cycle
≤
1%
(Note.1)
(Note.1)
TA=25℃
Tc=25℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
stg
Rating
60
±20
±3.8
±15.2
1
150
-55 to 150
Unit
V
A
W
℃
■
Marking
Marking
4N03
KA***
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1
SMD Type
Dual N-Channel
MOSFET
KX4N03W
■
Electrical Characteristics Ta = 25℃
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Tim e
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
PG.
0V
50
MOSFET
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 2.0 A
V
GS
= 10 V, I
D
= 2.0 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= 4.0 V, I
D
= 2.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 2.0 A
V
GS
= 10 V
R
G
=
6Ω
MIN.
TYP.
MAX.
10
±10
UNIT
uA
uA
V
S
1.5
2.5
2.5
67
86
95
580
100
50
10
9
32
4
m
Ω
m
Ω
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
V
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DSS
V
DD
= 48 V
V
GS
= 10 V
I
D
= 3.8 A
I
F
= 3.8 A, V
GS
= 0 V
I
F
= 3.8 A, V
GS
= 0 V
di/dt = 100 A /u s
I
D
=250μA, V
GS
=0V
12
2
3
0.80
33
58
60
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
GS
Wave Form
L
V
DD
V
GS
V
0
10%
V
GS(on)
90%
V
GS
= 20
V
DS
90%
90%
10%
10%
BV
DSS
V
DD
I
D
I
AS
V
DS
V
GS
0
V
DS
DS
Wave Form
V
0
t
d(on)
t
r
t
on
t
d(off)
t
off
t
f
Starting T
ch
=1 s
Duty Cycle
1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
R
L
V
DD
2
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SMD Type
Dual N-Channel
MOSFET
KX4N03W
■
Typical Characterisitics
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
P
T
- Total Power Dissipation - W
MOSFET
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
1unit
2unit
Single Pulse
Mounted on Ceramic
Board of 50 cm
2
x1.1 mm
2unit:
P
D
(FET1) : P
D
(FET2) = 1 : 1
120
100
80
60
40
20
0
0
dT - Derating Factor - %
25
50
75
100
125
T
A
- Ambient Temperature -
˚C
150
T
C
- Case Temperature -
˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
100
d
ite V)
Lim10
)
=
on
S
S(
R
D
V
G
I
D(DC)
@
(
16
I
D(pulse)
10
ms
1m
s
PW
I
D
- Drain Current - A
s
1
DC
(
10
0m
DC
s
(
2u
nit
)
I
D
- Drain Current - A
10
=1
00
12
4.5 V
8
V
GS
= 10 V
4.0 V
1u
nit
)
0.1
Single Pulse Mounted on Ceramic
Board of 50 cm
2
x1.1 mm
P
D
(FET1) : P
D
(FET2) = 1 : 1
4
0.01
0.1
1.0
10.0
100.0
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
10
V
DS
= 10 V
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
- Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
V
DS
= 10 V
I
D
= 1 mA
I
D
- Drain Current - A
1
0.1
0.01
0.001
T
A
= 125˚C
25˚C
75˚C
25˚C
2.5
2
1.5
0.0001
0.00001
0
1
2
3
4
1
50
0
50
100
150
V
GS
- Gate to Source Voltage - V
T
ch
- Channel Temperature -
˚C
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3
SMD Type
Dual N-Channel
MOSFET
KX4N03W
■
Typical Characterisitics
R
DS(on)
- Drain to Source On-state Resistance - mΩ
MOSFET
| y
fs
| - Forward Transfer Admittance - S
100
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
V
DS
= 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
= 4.0 V
160
10
120
T
A
= 125˚C
75˚C
25˚C
25˚C
1
0.10
T
A
= 25
˚C
25
˚C
75
˚C
125
˚C
80
40
0.010
0.01
0.1
1
10
100
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
= 4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
= 10 V
160
T
A
= 125˚C
80
75˚C
25˚C
25˚C
40
120
T
A
= 125˚C
80
75˚C
25˚C
40
25˚C
0
0.01
0.1
1
10
.
100
0
0.01
0.1
1
10
100
I
D
- Drain Current - A
I
D
- Drain Current - A
R
DS (on)
- Drain to Source On-state Resistance - mΩ
130
110
90
70
50
30
10
50
10 V
I
D
= 2.0 A
4.5 V
V
GS
= 4.0 V
R
DS (on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
I
D
= 2.0 A
125
100
75
50
25
0
0
0
50
100
150
2
4
6
8
10
12
14
16
18
20
T
ch
- Channel Temperature -
˚C
V
GS
- Gate to Source Voltage - V
4
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SMD Type
Dual N-Channel
MOSFET
KX4N03W
■
Typical Characterisitics
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
MOSFET
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
f = 1 MHz
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
100
1000
t
d(off)
C
iss
10
t
d(on)
t
r
t
f
V
DD
= 30 V
V
GS(on)
= 10 V
R
G
= 6
1
I
D
- Drain Current - A
10
100
C
oss
10
0.1
C
rss
1
10
100
V
DS
- Drain to Source Voltage - V
1
0.1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
I
F
- Source to Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
V
GS
= 0 V
10
1
10
0.1
0.01
0.4
0.6
0.8
1
1.2
1
0.1
1.0
10
100
V
F(S-D)
- Body Diode Forward Voltage - V
I
F
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
V
DS
- Drain to Source Voltage - V
10
8
6
4
2
I
D
= 3.8 A
0
0
2
4
6
8
10
12
V
DD
= 48 V
30 V
12 V
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
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