3DD13007
Elektronische Bauelemente
8A , 700V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
TO-220J
CLASSIFICATION OF t
S
Product-Rank
Range
3DD13007-A
3-4(µs)
3DD13007-B
4-5(µs)
3DD13007-C
5-6(µs)
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
700
400
9
8
2
150, -55~150
Unit
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
Min.
700
400
9
-
-
-
20
5
-
-
-
-
-
-
-
3
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
4
0.5
-
Max.
-
-
-
100
100
100
30
-
1
2
3
1.2
1.6
-
-
6
Unit
V
V
V
µA
µA
Test Condition
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=700V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=2A
V
CE
=5V, I
C
=8A
I
C
=2A, I
B
=0.4A
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=2A
I
C
=2A, I
B
=0.4A
I
C
=5A, I
B
=1A
V
CE
=10V, I
C
=0.5A, f =1MHz
I
C
=500mA, (UI9600)
I
C
=500mA, (UI9600)
Collector to Emitter Saturation Voltage
V
CE(sat)
Base to Emitter Saturation Voltage
Transition Frequency
Fall time
Storage time
V
BE(sat)
f
T
t
F
t
S
V
V
V
V
V
MHz
µs
µs
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2014 Rev. A
Page 1 of 2
3DD13007
Elektronische Bauelemente
8A , 700V
NPN Plastic-Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jun-2014 Rev. A
Page 2 of 2
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