Preliminary
Datasheet
BCR25FR-12LB
600V - 25A - Triac
Medium Power Use
Features
•
•
•
•
I
T (RMS)
: 25 A
V
DRM
: 600 V
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGTΙΙΙ
: 50 mA
•
Insulated Type
•
Planar Passivation Type
•
V
iso
: 2000 V
R07DS1155EJ0100
Rev.1.00
Feb 28, 2014
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Note5
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Symbol
V
DRM
V
DSM
Ratings
25
250
313
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 62°C
50 Hz sinewave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Unit
V
V
Typical value
Ta = 25°C, AC 1 minute,
T
1
•
T
2
•
G terminal to case
R07DS1155EJ0100 Rev.1.00
Feb 28, 2014
Page 1 of 7
BCR25FR-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0
5.0
1.5
2.0
2.0
2.0
50
50
50
—
—
2.8
—
—
Unit
mA
mA
V
V
V
V
mA
mA
mA
V
V
°C/W
V/μs
V/μs
Test conditions
Tj = 125°C, V
DRM
applied
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 40 A,
instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Tj = 150°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C
Tj = 150°C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –13 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS1155EJ0100 Rev.1.00
Feb 28, 2014
Page 2 of 7
BCR25FR-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
3
400
Rated Surge On-State Current
Surge On-State Current (A)
3.5
On-State Current (A)
300
10
2
Tj = 150°C
200
10
1
Tj = 25°C
100
10
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
V
GM
= 10 V
P
G(AV)
=
0.5 W
P
GM
= 5 W
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
Gate Voltage (V)
10
1
7
5 V
GT
= 2.5 V
3
2
10
0
7
5
3
2
I
GM
= 2 A
10
2
I
FGT I
I
RGT I
I
RGT III
10
1
-40
0
40
80
120
160
10
–1
I
FGT I
, I
RGT I
, I
RGT III
7
5
10
1
2 3 5 7 10
2
2 3
V
GD
= 0.1 V
5 710
3
2 3
5 710
4
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
4
10
3
10
4
10
5
3
10
2
2
1
10
1
-40
0
40
80
120
160
0
10
-1
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1155EJ0100 Rev.1.00
Feb 28, 2014
Page 3 of 7
BCR25FR-12LB
Allowable Case Temperature vs.
RMS On-State Current
160
140
Preliminary
Maximum On-State Power Dissipation
40
On-State Power Dissipation (W)
30
Case Temperature (°C)
Curves apply
regardless of
conduction angle
120
100
80
60
40
20
10
360° Conduction
Resistive,
inductive loads
0
10
20
30
40
0
360° Conduction
20
Resistive,
inductive loads
0
0
10
20
30
40
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160 160 t2.3
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Ambient Temperature (°C)
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
10
120 120 t2.3
100 100 t2.3
140
120
100
80
60
40
20
0
0
1
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are black
painted aluminum
and greased
20
30
40
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
10
3
Typical Example
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
5
10
2
10
4
10
3
10
1
-40
0
40
80
120
160
10
2
-40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1155EJ0100 Rev.1.00
Feb 28, 2014
Page 4 of 7
BCR25FR-12LB
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
10
3
Preliminary
Latching Current vs.
Junction Temperature
Latching Current (mA)
Distribution
10
2
T
2+
, G
–
Typical
Example
10
2
10
1
T
2–
, G
–
Typical
Example
T
2+
, G
+
Typical
Example
10
1
-40
0
40
80
120
160
10
0
-40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
140
120
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
Tj = 125°C
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
III Quadrant
100
80
60
40
20
0
10
100
1000
10000
I Quadrant
Typical Example
Tj = 150°C
III Quadrant
100
80
60
40
20
0
10
100
1000
10000
I Quadrant
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
10
2
Commutation Characteristics (Tj=150°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
I Quadrant
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
10
1
10
1
III Quadrant
I Quadrant
Minimum
Characteristics
Value
III Quadrant
Minimum
Characteristics
Value
10
0
10
1
10
2
10
3
10
0
10
0
10
1
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1155EJ0100 Rev.1.00
Feb 28, 2014
Page 5 of 7
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