SMD Type
N-Channel
MOSFET
AO4410
(KO4410)
SOP-8
MOSFET
■
Features
●
V
DS (V)
= 30V
●
I
D
= 18 A (V
GS
= 10V)
●
R
DS(ON)
＜
5.5mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
6.2mΩ (V
GS
= 4.5V)
0.21
-0.02
+0.04
1.50
0.15
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
D
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
t
≤
10s
Steady-State
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJL
T
J
T
stg
Rating
30
±12
18
15
80
3.1
2
40
75
24
150
-55 to 150
℃
℃/W
W
A
Unit
V
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1
SMD Type
N-Channel
MOSFET
AO4410
(KO4410)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=1A,V
GS
=0V
I
F
= 18A, d
I
/d
t
= 100A/us
V
GS
=10V, V
DS
=15V, R
L
=0.83Ω,
R
GEN
=3Ω
V
GS
=10V, V
DS
=15V, I
D
=18A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=15V, f=1MHz
Test Conditions
I
D
=250 uA, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=18A
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=15A
V
GS
=4.5V, V
DS
=5V
V
DS
=5V, I
D
=18A
80
T
J
=125℃
0.8
Min
30
MOSFET
Typ
Max
1
5
±100
1.5
5.5
7.4
6.2
Unit
V
uA
nA
V
mΩ
A
102
9130 10500
625
387
0.4
72.4
13.4
16.8
11
7
99
13
33
22.2
15
11
135
19.5
40
30
4.5
1
0.5
85
S
pF
Ω
nC
ns
nC
A
V
Note : The static characteristics in Figures 1 to 6 are obtained using <300
μs
pulses, duty cycle 0.5% max.
■
Marking
Marking
4410
KC****
2
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SMD Type
N-Channel
MOSFET
AO4410
(KO4410)
■
Typical Characterisitics
60
50
40
I
D
(A)
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
6.0
Normalized On-Resistance
V
GS
=4.5V
1.6
I
D
=18A
10V
50
2.5V
40
I
D
(A)
V
GS
=2V
30
20
10
0
0
0.5
1
1.5
125°C
V
DS
=5V
60
MOSFET
25°C
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=4.5V
5.5
R
DS(ON)
(m
Ω
)
1.4
V
GS
=10V
1.2
5.0
V
GS
=10V
4.5
1
4.0
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
16
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
1.0E+01
12
R
DS(ON)
(m
Ω
)
I
D
=18A
125°C
I
S
(A)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
125°C
8
4
25°C
25°C
0
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
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3
SMD Type
N-Channel
MOSFET
AO4410
(KO4410)
■
Typical Characterisitics
5
4
V
GS
(Volts)
3
2
1
0
0
10
20
30
40
50
60
70
80
90
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
0
5
10
15
V
DS
=15V
I
D
=18A
Capacitance (pF)
100000
MOSFET
C
iss
10000
1000
C
rss
C
oss
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
R
DS(ON)
limited
10ms
0.1s
1s
10s
100µs
1ms
10µs
100
80
Power (W)
60
40
20
0
0.001
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
1.0
DC
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
V
DS
(Volts)
10
.
100
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
10
100
1000
0.01
0.00001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
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