SMD Type
N-Channel
MOSFET
AO4468
(KO4468)
SOP-8
MOSFET
■
Features
●
V
DS (V)
= 30V
●
I
D
= 10.5 A (V
GS
= 10V)
●
R
DS(ON)
＜
23mΩ (V
GS
= 4.5V)
0.21
-0.02
+0.04
1.50
0.15
●
R
DS(ON)
＜
17mΩ (V
GS
= 10V)
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
D
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Power Dissipation
Avalanche energy
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
L=0.1mH
t
≤
10s
Steady-State
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
,I
AR
P
D
E
AS
,E
AR
R
thJA
R
thJC
T
J
T
stg
Rating
30
±20
10.5
8.5
50
19
3.1
2
18
40
75
24
150
-55 to 150
℃
℃/W
W
mJ
A
Unit
V
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1
SMD Type
N-Channel
MOSFET
AO4468
(KO4468)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
(10V)
(4.5V)
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=1A,V
GS
=0V
I
F
= 10.5A, d
I
/d
t
= 100A/μs
V
GS
=10V, V
DS
=15V, R
L
=1.45Ω,R
G
=3Ω
V
GS
=10V, V
DS
=15V, I
D
=10.5A
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=15V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=30V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±16V
V
DS
=V
GS
, I
D
=10 mA
V
GS
=10V, I
D
=10.5A
V
GS
=10V, I
D
=10.5A
V
GS
=5V, I
D
=9A
V
GS
=10V, V
DS
=5V
V
DS
=5V, I
D
=10.5A
T
J
=125℃
MOSFET
Min
30
Typ
Max
1
5
±10
Unit
V
uA
uA
V
mΩ
A
1.2
2.4
17
24
23
50
36
888
145
115
0.5
15
7.5
2.5
3
5
3.5
19
3.5
22
12
4
1
1.7
S
pF
Ω
nC
ns
nC
A
V
■
Marking
Marking
4468
KC****
2
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SMD Type
N-Channel
MOSFET
AO4468
(KO4468)
■
Typical Characterisitics
30
25
20
I
D
(A)
I
D
(A)
3V
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
25
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
0
25
50
75
100
125
10V
4V
30
3.5V
25
20
15
10
5
0
1
2
3
125°
C
25°
C
V
DS
=5V
MOSFET
V
GS
=2.5V
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
R
DS(ON)
(m
Ω
)
20
V
GS
=4.5V
V
GS
=4.5V
I
D
=9A
15
V
GS
=10V
10
V
GS
=10V
I
D
=10.5A
150
175
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
I
D
=10.5A
35
30
25
20
15
10
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°
C
125°
C
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°
C
25°
C
40
R
DS(ON)
(m
Ω
)
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3
SMD Type
N-Channel
MOSFET
AO4468
(KO4468)
■
Typical Characterisitics
10
V
DS
=15V
I
D
=10.5A
Capacitance (pF)
1200
1000
800
600
400
200
0
0
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
15
0
C
rss
C
iss
MOSFET
8
V
GS
(Volts)
6
4
C
oss
2
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
T
J(Max)
=150°
C
T
A
=25°
C
R
DS(ON)
limited
10µs
100µs
1ms
10ms
10s
DC
10000
T
A
=25°
C
1000
Power (W)
100
10
1
0.00001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
P
D
T
on
0.01
0.1
1
10
T
100
1000
0.001
0.00001
0.0001
0.001
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
4
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