SMD Type
N-Channel
MOSFET
DMZ6005E
(KMZ6005E)
SOT-23
MOSFET
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
●
V
DS (V)
= 600V
+0.1
2.4
-0.1
●
I
D
= 20mA
●
R
DS(ON)
＜
700mΩ (V
GS
= 0 V)
●
Fast Switching Speed
●
RoHS Compliant
●
Halogen-free available
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
■
Features
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1. Gate
2. Source
3. Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Drain-Gate Voltage[
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Soldering Temperature
Junction Temperature
Storage Temperature Range
Symbol
V
DS
V
DG
V
GS
I
D
I
DM
P
D
R
thJA
T
L
T
J
T
stg
Rating
600
600
±20
20
80
500
250
300
150
-55 to 150
℃
mA
mW
℃/W
V
Unit
+0.1
0.38
-0.1
0-0.1
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SMD Type
N-Channel
MOSFET
DMZ6005E
(KMZ6005E)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Saturated Drain-to-Source Current
Drain-to-Source Leakage Current
Gate-Body Leakage Current
Gate-to-Source Cut-off Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
Note.: Pulse width≤380μs; duty cycle≤2%.
MOSFET
Symbol
V
DSS
I
DSS
I
D(OFF)
I
GSS
V
GS(OFF)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
Test Conditions
I
D
=250μA, V
GS
=-5V
V
GS
=0V, V
DS
=25V
V
DS
=600V, V
GS
=-5V
V
DS
=600V, V
GS
=-5V ,T
J
= 125℃
V
DS
=0V, V
GS
=±20V
V
DS
=3V , I
D
=8 uA
V
GS
=0V, I
D
=3mA
V
DS
=10V, I
D
=5mA
V
GS
=-5V, V
DS
=25V, f=1MHz
Min
600
5
Typ
Max
25
0.1
10
±20
Unit
V
mA
uA
V
Ω
mS
pF
-3
15.4
12.3
2.6
1.8
1.55
-1.8
700
V
GS
=-5~5V, V
DS
=300V, I
D
=7mA
0.12
0.56
4
9
14
84
1.2
nC
V
GS
= -5V~5V
V
DD
= 300V, I
D
=7mA R
G
= 20Ω
ns
I
S
=3mA,V
GS
=-10V
V
■
Marking
Marking
605E
2
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SMD Type
N-Channel
MOSFET
DMZ6005E
(KMZ6005E)
■
Typical Characterisitics
Figure 1. Maximum Power Dissipation vs.
Case Temperature
MOSFET
0.6
P
D
, Power Dissipation (W)
0.5
25.0
20.0
I
D
, Drain Current (mA)
15.0
10.0
5.0
0.0
Figure 2. Maximum Continuous Drain Current
vs Case Temperature
0.4
0.3
0.2
0.1
0
25
50
75
100
125
T
C
, Case Temperature (℃)
150
25
50
75
100
125
150
T
C
, Case Temperature (℃)
Figure 4. Typical Transfer Characteristics
7
I
D
, Drain-to-Source Current (mA)
6
5
4
3
2
1
0
-2
-1.5
-1
-0.5
0
0.5
1
V
GS
, Gate-to-Source Voltage,(V)
5
V
GS
. Gate-to-Source Voltage(V)
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
Q
G
, Gate Charge(nC)
Figure 6. Typical Gate Charge vs. Gate-to-
Source Voltage
V
DS
= 3V
Figure 3. Typical Output Characteristics
60
50
I
D
, Drain Current(mA)
40
30
20
10
0
0
20
40
60
80
100
V
DS
, Drain-to-Source Voltage(V)
18
16
14
C,Capacitance(pF)
12
10
8
6
4
2
0
0
10
20
30
40
V
DS
,Drain Voltage(V)
COSS
CRSS
CISS
VGS=1V
VGS=10V
VGS=0.5V
VGS=0.2V
VGS=0.1V
VGS=-0.1V
VGS=-0.2V
VGS=-0.5V
Figure 5. Typical Capacitance vs. Drain-to-
Source Voltage
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