DIP Type
N-Channel
MOSFET
IRF1404Z
(KRF1404Z)
TO-220
1.30
±
0.10
(1.70)
9.90
±
0.20
2.80
±
0.10
(8.70)
ø3.60
±
0.10
MOSFET
4.50
±
0.20
1.30
–0.05
+0.10
■
Features
●
I
D
= 75 A (V
GS
= 10V)
●
R
DS(ON)
＜
3.7mΩ (V
GS
= 10V)
13.08
±
0.20
9.20
±
0.20
15.90
±
0.20
18.95MAX.
10.08
±
0.30
(3.70)
(1.46)
1.27
±
0.10
(1.00)
●
V
DS (V)
= 40V
●
Fast Switching
●
Repetitive Avalanche Allowed up to Tjmax
1.52
±
0.10
1 2 3
0.80
±
0.10
2.54TYP
[2.54
±
0.20
]
2.54TYP
[2.54
±
0.20
]
(3.00)
(45
)
0.50
–0.05
+0.10
2.40
±
0.20
10.00
±
0.20
1 GATE
2 DRAIN
3 SOURCE
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
(Package Limited) Tc=25℃
Continuous Drain Current
Pulsed Drain Current
Avalanche Curren
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Power Dissipation
Thermal Resistance.Junction- to-Ambient
(PCB Mount)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Tc=25℃
(Silicon Limited)
Tc=25℃
Tc=100℃
I
DM
I
AR
E
AR
E
AS
P
D
R
thJA
R
thJC
T
J
T
stg
I
D
Symbol
V
DS
V
GS
Rating
40
±20
75
180
120
710
See Fig.12a, 12b, 15, 16
330
480
200
62
40
0.75
175
-55 to 175
℃
℃/W
W
mJ
A
Unit
V
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1
DIP Type
N-Channel
MOSFET
IRF1404Z
(KRF1404Z)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Internal Drain Inductance
Internal Drain Inductance
Maximum Body-Diode Continuous Current
Pulsed Source Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
L
D
L
S
I
S
I
SM
V
SD
I
F
= 75A, d
I
/d
t
= 100A/μs,V
DD
=20V,
Tj = 25℃
Between lead,6mm (0.25in.) from
package and center of die contact
MOSFET symbol
showing the
ntegral reverse
p-n junction diode.
MOSFET
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=40V, V
GS
=0V
V
DS
=40V, V
GS
=0V, T
J
=125℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=75A
V
DS
=25V, I
D
=75A
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=1V, f=1MHz
V
GS
=0V, V
DS
=32V, f=1MHz
V
GS
=0V, V
DS
=0V to 32V
V
GS
=10V, V
DS
=32V, I
D
=75A
Min
40
Typ
Max
20
250
±100
Unit
V
μA
nA
V
mΩ
S
2
2.7
170
4340
1030
550
3300
920
1350
100
31
42
18
110
36
58
28
34
4.5
7.5
4
3.7
pF
150
nC
V
GS
=10V, V
DS
=20V, I
D
=75A,R
G
=3Ω
ns
42
51
nC
nH
75
A
750
1.3
V
I
S
=75A,V
GS
=0V,Tj = 25℃
2
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DIP Type
N-Channel
MOSFET
IRF1404Z
(KRF1404Z)
■
Typical Characterisitics
1000
1000
MOSFET
ID, Drain-to-Source Current (A)
100
10
ID, Drain-to-Source Current (A)
100
1
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
4.5V
10
0.1
1
0.1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
200
T J = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(
A)
T J = 25°C
160
T J = 175°C
100
120
T J = 25°C
80
10
40
1
4.0
5.0
6.0
7.0
VDS = 15V
20µs PULSE WIDTH
8.0
9.0
10.0
11.0
VDS = 15V
20µs PULSE WIDTH
0
40
80
120
160
0
ID, Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
8000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
6000
16
VDS= 32V
VDS= 20V
C, Capacitance (pF)
Ciss
4000
12
8
2000
Coss
Crss
4
0
1
10
100
0
0
40
80
120
160
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
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3
DIP Type
N-Channel
MOSFET
IRF1404Z
(KRF1404Z)
■
Typical Characterisitics
1000.0
10000
MOSFET
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
ID, Drain-to-Source Current (A)
1000
10.0
T J = 25°C
1.0
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
1msec
0.1
0.2
0.6
1.0
VGS = 0V
1.4
1.8
1
10msec
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
200
RDS(on) , Drain-to-Source On Resistance
Fig 8.
Maximum Safe Operating Area
2.0
LIMITED BY PACKAGE
160
ID , Drain Current (A)
ID = 75A
VGS = 10V
1.5
80
(Normalized)
120
1.0
40
0
25
50
75
100
125
150
175
T C , Case Temperature
.
(°C)
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1
Fig 10.
Normalized On-Resistance
Vs. Temperature
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
0.001
1E-006
1E-005
0.0001
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
t1 , Rectangular Pulse Duration (sec)
4
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DIP Type
N-Channel
MOSFET
IRF1404Z
(KRF1404Z)
■
Typical Characterisitics
MOSFET
EAS, Single Pulse Avalanche Energy (mJ)
15V
600
500
VDS
L
DRIVER
400
RG
20V
V
GS
D.U.T
IAS
tp
+
V
- DD
A
300
0.01Ω
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Q
GS
V
G
Charge
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Q
GD
VGS(th) Gate threshold Voltage (V)
4.0
3.0
ID = 250µA
Fig 13a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
2.0
50KΩ
12V
.2µF
.3µF
D.U.T.
V
GS
3mA
+
V
-
DS
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
I
G
I
D
Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage Vs. Temperature
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